RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Nanya Technology NT512T64U88B0BY-3C 512MB
Wilk Elektronik S.A. IR2400D464L17S/4G 4GB
比较
Nanya Technology NT512T64U88B0BY-3C 512MB vs Wilk Elektronik S.A. IR2400D464L17S/4G 4GB
总分
Nanya Technology NT512T64U88B0BY-3C 512MB
总分
Wilk Elektronik S.A. IR2400D464L17S/4G 4GB
差异
规格
评论
差异
需要考虑的原因
Nanya Technology NT512T64U88B0BY-3C 512MB
报告一个错误
更快的读取速度,GB/s
2
14.1
测试中的平均数值
需要考虑的原因
Wilk Elektronik S.A. IR2400D464L17S/4G 4GB
报告一个错误
低于PassMark测试中的延时,ns
24
71
左右 -196% 更低的延时
更快的写入速度,GB/s
11.8
1,322.6
测试中的平均数值
更高的内存带宽,mbps
19200
5300
左右 3.62 更高的带宽
规格
完整的技术规格清单
Nanya Technology NT512T64U88B0BY-3C 512MB
Wilk Elektronik S.A. IR2400D464L17S/4G 4GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
71
24
读取速度,GB/s
2,831.6
14.1
写入速度,GB/s
1,322.6
11.8
内存带宽,mbps
5300
19200
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度
5-5-5-15 / 667 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
399
2879
Nanya Technology NT512T64U88B0BY-3C 512MB RAM的比较
Hynix Semiconductor (Hyundai Electronics) HYMP564U64EP8-S5 512MB
G Skill Intl F4-3200C16-16GTZSK 16GB
Wilk Elektronik S.A. IR2400D464L17S/4G 4GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-444.A00LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Corsair CMX8GX3M2A2000C9 4GB
G Skill Intl F4-3600C16-8GTZKW 8GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Hoodisk Electronics Co Ltd GKE800SO51216-2400 8GB
Kingston 99U5471-030.A00LF 8GB
Corsair CMK32GX4M2A2800C16 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CMW16GX4M2Z4000C18 8GB
Crucial Technology CT102464BF160B.C16 8GB
Kingston KHX2666C13/16GX 16GB
Kingston KP223C-ELD 2GB
Kingston KHX2133C13S4/8G 8GB
SK Hynix HMT351R7EFR8C-RD 4GB
G Skill Intl F4-3200C16-16GVS 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Apacer Technology 78.CAGPP.ARW0B 8GB
Elpida EBJ10UE8BAFA-AE-E 1GB
Thermaltake Technology Co Ltd RA24D408GX2-3600C18A 8GB
Samsung M3 78T5663RZ3-CE6 2GB
G Skill Intl F4-3600C19-16GSXW 16GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Micron Technology 8ATF1G64HZ-2G6E3 8GB
Samsung M378B5773DH0-CH9 2GB
Corsair CMK16GX4M2D3600C16 8GB
Kingston 9965516-112.A00LF 16GB
G Skill Intl F4-2666C19-32GNT 32GB
Kingston K531R8-MIN 4GB
Kingston X2YH1K-MIE 16GB
报告一个错误
×
Bug description
Source link