Peak Electronics 256X64M-67E 2GB vs Corsair CM4X16GE2666C16K8 16GB

总分

Peak Electronics 256X64M-67E 2GB

Peak Electronics 256X64M-67E 2GB

总分

Corsair CM4X16GE2666C16K8 16GB

Corsair CM4X16GE2666C16K8 16GB

差异规格评论

差异

Peak Electronics 256X64M-67E 2GB

需要考虑的原因
Peak Electronics 256X64M-67E 2GB

报告一个错误

更快的读取速度，GB/s

5 15.6

测试中的平均数值

Corsair CM4X16GE2666C16K8 16GB

需要考虑的原因
Corsair CM4X16GE2666C16K8 16GB

报告一个错误

低于PassMark测试中的延时，ns

27 39

左右 -44% 更低的延时
更快的写入速度，GB/s

12.0 1,597.0

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Peak Electronics 256X64M-67E 2GB

Corsair CM4X16GE2666C16K8 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

39 27
读取速度，GB/s

5,022.9 15.6
写入速度，GB/s

1,597.0 12.0
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

753 2982

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston KTD3KX-MIB 8GB

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Hexon Technology Pte Ltd HEXON 1GB

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Crucial Technology BLS4G4D240FSE.M8FADM 4GB

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SK Hynix HMA81GS6DJR8N-VK 8GB

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SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

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G Skill Intl F3-14900CL8-4GBXM 4GB

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SK Hynix HMAA2GS6CJR8N-XN 16GB

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SK Hynix HMA82GS6CJR8N-VK 16GB

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Micron Technology 16ATF2G64AZ-2G1A1 16GB

Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

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Corsair CMR16GX4M2C3600C18 8GB

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SpecTek Incorporated ?????????????????? 2GB

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G Skill Intl F4-3000C15-8GTZ 8GB

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Nanya Technology NT2GT64U8HD0BN-AD 2GB

SK Hynix GKE160UD102408-2400 16GB

SK Hynix GKE160UD102408-2400 16GB