Peak Electronics 256X64M-67E 2GB vs Corsair CMK8GX4M2A2133C13 4GB

总分

Peak Electronics 256X64M-67E 2GB

Peak Electronics 256X64M-67E 2GB

总分

Corsair CMK8GX4M2A2133C13 4GB

Corsair CMK8GX4M2A2133C13 4GB

差异规格评论

差异

Peak Electronics 256X64M-67E 2GB

需要考虑的原因
Peak Electronics 256X64M-67E 2GB

报告一个错误

更快的读取速度，GB/s

5 16.6

测试中的平均数值

Corsair CMK8GX4M2A2133C13 4GB

需要考虑的原因
Corsair CMK8GX4M2A2133C13 4GB

报告一个错误

低于PassMark测试中的延时，ns

32 39

左右 -22% 更低的延时
更快的写入速度，GB/s

12.1 1,597.0

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Peak Electronics 256X64M-67E 2GB

Corsair CMK8GX4M2A2133C13 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

39 32
读取速度，GB/s

5,022.9 16.6
写入速度，GB/s

1,597.0 12.1
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

753 2768

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMW16GX4M2C3200C14 8GB

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Avexir Technologies Corporation DDR4-3600 CL17 4GB 4GB

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Micron Technology 8ATF1G64HZ-2G1A1 8GB

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SK Hynix HYMP125S64CP8-S6 2GB

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Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB

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Crucial Technology BLT8G4D32AET4K.M8FE1 8GB

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Crucial Technology CT51264BD160B.C16F 4GB

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TwinMOS 8DHE3MN8-HATP 2GB

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Kingston MSI24D4U7D8MD-16 16GB

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Samsung M393B1G70BH0-CK0 8GB

G Skill Intl F4-4133C19-8GTZRF 8GB

G Skill Intl F4-4133C19-8GTZRF 8GB

G Skill Intl F3-2666C12-8GTXD 8GB

G Skill Intl F3-2666C12-8GTXD 8GB

Samsung M378A1K43CB2-CTD 8GB

Samsung M378A1K43CB2-CTD 8GB

Strontium EVMT8G1600U86S 8GB

Strontium EVMT8G1600U86S 8GB

A-DATA Technology DDR4 2400 16GB

A-DATA Technology DDR4 2400 16GB