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Peak Electronics 256X64M-67E 2GB
Micron Technology TEAMGROUP-UD4-2400 16GB
比较
Peak Electronics 256X64M-67E 2GB vs Micron Technology TEAMGROUP-UD4-2400 16GB
总分
Peak Electronics 256X64M-67E 2GB
总分
Micron Technology TEAMGROUP-UD4-2400 16GB
差异
规格
评论
差异
需要考虑的原因
Peak Electronics 256X64M-67E 2GB
报告一个错误
更快的读取速度,GB/s
5
16.8
测试中的平均数值
需要考虑的原因
Micron Technology TEAMGROUP-UD4-2400 16GB
报告一个错误
低于PassMark测试中的延时,ns
30
39
左右 -30% 更低的延时
更快的写入速度,GB/s
11.3
1,597.0
测试中的平均数值
更高的内存带宽,mbps
19200
5300
左右 3.62 更高的带宽
规格
完整的技术规格清单
Peak Electronics 256X64M-67E 2GB
Micron Technology TEAMGROUP-UD4-2400 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
39
30
读取速度,GB/s
5,022.9
16.8
写入速度,GB/s
1,597.0
11.3
内存带宽,mbps
5300
19200
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 18
时序/时钟速度
5-5-5-15 / 667 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
753
3119
Peak Electronics 256X64M-67E 2GB RAM的比较
A Force Manufacturing Ltd. 256X64M-67E 2GB
Kingston ACR26D4U9S8MH-8 8GB
Micron Technology TEAMGROUP-UD4-2400 16GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M393B1G70BH0-CK0 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Micron Technology TEAMGROUP-UD4-2400 16GB
Smart Modular SF564128CJ8N6NNSEG 4GB
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Maxsun MSD44G24Q3 4GB
Crucial Technology CT51264BD160B.C16F 4GB
A-DATA Technology AO2P26KC8T1-BXGSHC 8GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Corsair CMSX8GX4M2A2666C18 4GB
Kingston 9965525-144.A00LF 8GB
Micron Technology 18ASF2G72AZ-2G1A1 16GB
A-DATA Technology AD73I1B1672EG 2GB
Crucial Technology CT8G4DFS8213.C8FH1 8GB
TwinMOS 8DHE3MN8-HATP 2GB
Hua Nan San Xian Technology Co Ltd HNMI8GD4240D0 8GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Kingston 9905625-030.A00G 8GB
PNY Electronics PNY 2GB
Kingston 99U5624-003.A00G 8GB
报告一个错误
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Bug description
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