Peak Electronics 256X64M-67E 2GB vs Samsung M378A1K43CB2-CRC 8GB

总分

Peak Electronics 256X64M-67E 2GB

Peak Electronics 256X64M-67E 2GB

总分

Samsung M378A1K43CB2-CRC 8GB

Samsung M378A1K43CB2-CRC 8GB

差异规格评论

差异

Peak Electronics 256X64M-67E 2GB

需要考虑的原因
Peak Electronics 256X64M-67E 2GB

报告一个错误

更快的读取速度，GB/s

5 15.4

测试中的平均数值

Samsung M378A1K43CB2-CRC 8GB

需要考虑的原因
Samsung M378A1K43CB2-CRC 8GB

报告一个错误

低于PassMark测试中的延时，ns

34 39

左右 -15% 更低的延时
更快的写入速度，GB/s

10.7 1,597.0

测试中的平均数值
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

Peak Electronics 256X64M-67E 2GB

Samsung M378A1K43CB2-CRC 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

39 34
读取速度，GB/s

5,022.9 15.4
写入速度，GB/s

1,597.0 10.7
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

753 2739

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kreton Corporation 51624xxxx68x35xxxx 2GB

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G Skill Intl F4-3200C16-8GSXKB 8GB

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Nanya Technology NT512T64U88B0BY-3C 512MB

Corsair CMK64GX4M4C3200C16 16GB

Corsair CMK64GX4M4C3200C16 16GB

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G Skill Intl F4-3200C16-16GTZ 16GB

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Kingston KHX3200C18D4/8G 8GB

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Kingston 9965600-027.A00G 16GB