Peak Electronics 256X64M-67E 2GB vs Samsung M391A1G43EB1-CPB 8GB

总分

Peak Electronics 256X64M-67E 2GB

Peak Electronics 256X64M-67E 2GB

总分

Samsung M391A1G43EB1-CPB 8GB

Samsung M391A1G43EB1-CPB 8GB

差异规格评论

差异

Peak Electronics 256X64M-67E 2GB

需要考虑的原因
Peak Electronics 256X64M-67E 2GB

报告一个错误

更快的读取速度，GB/s

5 12.4

测试中的平均数值

Samsung M391A1G43EB1-CPB 8GB

需要考虑的原因
Samsung M391A1G43EB1-CPB 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 39

左右 -56% 更低的延时
更快的写入速度，GB/s

10.6 1,597.0

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Peak Electronics 256X64M-67E 2GB

Samsung M391A1G43EB1-CPB 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

39 25
读取速度，GB/s

5,022.9 12.4
写入速度，GB/s

1,597.0 10.6
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

753 1511

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Team Group Inc. TEAMGROUP-UD4-4500 8GB

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Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N

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Crucial Technology CT8G4DFRA266.C8FP 8GB

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Gold Key Technology Co Ltd GKE160SO102408-2666 16GB

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V-Color Technology Inc. TA48G36S818BN 8GB

V-Color Technology Inc. TA48G36S818BN 8GB

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Kingston 9905403-174.A00LF 2GB

Crucial Technology CT8G4SFRA266.C8FE 8GB

Crucial Technology CT8G4SFRA266.C8FE 8GB

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Samsung M391B5673EH1-CH9 2GB

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Corsair CMW128GX4M8C3000C16 16GB

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Samsung M393A1G40DB0-CPB 8GB

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G Skill Intl F4-3200C16-8GTZR 8GB

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Asgard VMA45UG-MEC1U2AW1 8GB

Corsair CMW16GX4M2Z4600C18 8GB

Corsair CMW16GX4M2Z4600C18 8GB