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PNY Electronics 4GBH2X02E99927-16 4GB
G Skill Intl F4-4600C19-8GTZKKC 8GB

PNY Electronics 4GBH2X02E99927-16 4GB vs G Skill Intl F4-4600C19-8GTZKKC 8GB

总分
star star star star star
PNY Electronics 4GBH2X02E99927-16 4GB

PNY Electronics 4GBH2X02E99927-16 4GB

总分
star star star star star
G Skill Intl F4-4600C19-8GTZKKC 8GB

G Skill Intl F4-4600C19-8GTZKKC 8GB

差异 规格 评论

差异

PNY Electronics 4GBH2X02E99927-16 4GB 需要考虑的原因
PNY Electronics 4GBH2X02E99927-16 4GB
报告一个错误
G Skill Intl F4-4600C19-8GTZKKC 8GB 需要考虑的原因
G Skill Intl F4-4600C19-8GTZKKC 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    17 left arrow 63
    左右 -271% 更低的延时
  • 更快的读取速度，GB/s
    21.2 left arrow 6.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    17.2 left arrow 5.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
PNY Electronics 4GBH2X02E99927-16 4GB
G Skill Intl F4-4600C19-8GTZKKC 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    63 left arrow 17
  • 读取速度，GB/s
    6.1 left arrow 21.2
  • 写入速度，GB/s
    5.0 left arrow 17.2
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1274 left arrow 3714

PNY Electronics 4GBH2X02E99927-16 4GB RAM的比较

AMD R7416G2133U2S 16GB
Kingston KTP9W1-MIE 16GB

G Skill Intl F4-4600C19-8GTZKKC 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M3 93T5750CZA-CE6 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Gold Key Technology Co Ltd NMGD480E82-3200D 8GB
内存RAM
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内存RAM
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G Skill Intl F4-3733C17-8GTZKW 8GB
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内存RAM
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内存RAM
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内存RAM
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Crucial Technology CT25664BA160B.C16F 2GB
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内存RAM
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内存RAM
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内存RAM
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Kingston 99U5474-022.A00LF 2GB
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内存RAM
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Samsung M393B1K70CH0-CH9 8GB
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V-Color Technology Inc. TC416G24D817 16GB
内存RAM