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Samsung M393B5170FH0-CK0 4GB
V-GEN D4H16GS24A8 16GB

Samsung M393B5170FH0-CK0 4GB vs V-GEN D4H16GS24A8 16GB

总分
star star star star star
Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

总分
star star star star star
V-GEN D4H16GS24A8 16GB

V-GEN D4H16GS24A8 16GB

差异 规格 评论

差异

Samsung M393B5170FH0-CK0 4GB 需要考虑的原因
Samsung M393B5170FH0-CK0 4GB
报告一个错误
V-GEN D4H16GS24A8 16GB 需要考虑的原因
V-GEN D4H16GS24A8 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 27
    左右 -17% 更低的延时
  • 更快的读取速度，GB/s
    14.5 left arrow 11.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Samsung M393B5170FH0-CK0 4GB
V-GEN D4H16GS24A8 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 23
  • 读取速度，GB/s
    11.8 left arrow 14.5
  • 写入速度，GB/s
    7.3 left arrow 7.3
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2057 left arrow 2361

Samsung M393B5170FH0-CK0 4GB RAM的比较

Samsung M378B1G73BH0-CH9 8GB
Mushkin 994052 4GB

V-GEN D4H16GS24A8 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CMD8GX3M2A2933C12 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston KHX1600C9S3L/4G 4GB
Kingston KHX1600C9S3L/4G 4GB
Corsair CMK32GX4M2L3000C15 16GB
Corsair CMK32GX4M2L3000C15 16GB
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
Avexir Technologies Corporation DDR4-2133 CL15 16GB 16GB
Avexir Technologies Corporation DDR4-2133 CL15 16GB 16G
内存RAM
Samsung M393B5170FH0-CK0 4GB
Samsung M393B5170FH0-CK0 4GB
V-GEN D4H16GS24A8 16GB
V-GEN D4H16GS24A8 16GB
内存RAM
Kingston 99U5403-036.A00G 4GB
Kingston 99U5403-036.A00G 4GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2133AH 8GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208
内存RAM
Kingmax Semiconductor KLDD48F-B8KU5 1GB
Kingmax Semiconductor KLDD48F-B8KU5 1GB
Micron Technology 72ASS8G72LZ-2G3B2 64GB
Micron Technology 72ASS8G72LZ-2G3B2 64GB
内存RAM
Samsung M395T5160QZ4-CE66 2GB
Samsung M395T5160QZ4-CE66 2GB
Kingston 9965600-012.A01G 16GB
Kingston 9965600-012.A01G 16GB
内存RAM
Kingston 99U5584-007.A00LF 4GB
Kingston 99U5584-007.A00LF 4GB
G Skill Intl F4-3000C14-16GVRD 16GB
G Skill Intl F4-3000C14-16GVRD 16GB
内存RAM
Samsung M471B5173DB0-YK0 4GB
Samsung M471B5173DB0-YK0 4GB
Micron Technology 36ASF2G72LZ-2G1A1 16GB
Micron Technology 36ASF2G72LZ-2G1A1 16GB
内存RAM
SK Hynix HYMP112U64CP8-S6 1GB
SK Hynix HYMP112U64CP8-S6 1GB
G Skill Intl F4-2400C17-4GFT 4GB
G Skill Intl F4-2400C17-4GFT 4GB
内存RAM
A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology DOVF1B163G2G 2GB
Crucial Technology CT8G4DFS8266.C8FD1 8GB
Crucial Technology CT8G4DFS8266.C8FD1 8GB
内存RAM
Kingston KHX3200C18D4/8G 8GB
Kingston KHX3200C18D4/8G 8GB
Crucial Technology CT8G4DFS8213.M8FB 8GB
Crucial Technology CT8G4DFS8213.M8FB 8GB
内存RAM
Kingston 99U5584-004.A00LF 4GB
Kingston 99U5584-004.A00LF 4GB
V-Color Technology Inc. TL8G36818C-I2PSAAS 8GB
V-Color Technology Inc. TL8G36818C-I2PSAAS 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Micron Technology 36ASF2G72PZ-2G6E1 16GB
Micron Technology 36ASF2G72PZ-2G6E1 16GB
内存RAM
Kingston HP32D4S2S1ME-4 4GB
Kingston HP32D4S2S1ME-4 4GB
G Skill Intl F4-3200C14-8GFX 8GB
G Skill Intl F4-3200C14-8GFX 8GB
内存RAM