RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
PNY Electronics 64C0MHHHJ-HS 4GB
DSL Memory D4SS12081SH21A-A 4GB

PNY Electronics 64C0MHHHJ-HS 4GB vs DSL Memory D4SS12081SH21A-A 4GB

总分
star star star star star
PNY Electronics 64C0MHHHJ-HS 4GB

PNY Electronics 64C0MHHHJ-HS 4GB

总分
star star star star star
DSL Memory D4SS12081SH21A-A 4GB

DSL Memory D4SS12081SH21A-A 4GB

差异 规格 评论

差异

PNY Electronics 64C0MHHHJ-HS 4GB 需要考虑的原因
PNY Electronics 64C0MHHHJ-HS 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 28
    左右 7% 更低的延时
  • 更快的读取速度，GB/s
    13.7 left arrow 13.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.3 left arrow 5.8
    测试中的平均数值
DSL Memory D4SS12081SH21A-A 4GB 需要考虑的原因
DSL Memory D4SS12081SH21A-A 4GB
报告一个错误
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
PNY Electronics 64C0MHHHJ-HS 4GB
DSL Memory D4SS12081SH21A-A 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 28
  • 读取速度，GB/s
    13.7 left arrow 13.2
  • 写入速度，GB/s
    8.3 left arrow 5.8
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2270 left arrow 1699

PNY Electronics 64C0MHHHJ-HS 4GB RAM的比较

A-DATA Technology EL63I1C1624ZV 4GB
G Skill Intl F4-3200C16-8GTRS 8GB

DSL Memory D4SS12081SH21A-A 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M393B2G70BH0-CK0 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Mushkin 994083 4GB
Mushkin 994083 4GB
Kingston KHX2666C15S4/8G 8GB
Kingston KHX2666C15S4/8G 8GB
内存RAM
SK Hynix HMT451U7BFR8C-RD 4GB
SK Hynix HMT451U7BFR8C-RD 4GB
Corsair CMWX8GD3200C16W4 8GB
Corsair CMWX8GD3200C16W4 8GB
内存RAM
Corsair VS1GB800D2 1GB
Corsair VS1GB800D2 1GB
A-DATA Technology AO2P26KC8T1-BC1S 8GB
A-DATA Technology AO2P26KC8T1-BC1S 8GB
内存RAM
SK Hynix HMT351R7EFR8C-RD 4GB
SK Hynix HMT351R7EFR8C-RD 4GB
Micron Technology 16ATF2G64AZ-2G1B1 16GB
Micron Technology 16ATF2G64AZ-2G1B1 16GB
内存RAM
Corsair CML8GX3M2A1600C9 4GB
Corsair CML8GX3M2A1600C9 4GB
Smart Modular SF4641G8CKHI6DFSDS 8GB
Smart Modular SF4641G8CKHI6DFSDS 8GB
内存RAM
Kingston KHX3200C18D4/8G 8GB
Kingston KHX3200C18D4/8G 8GB
Patriot Memory (PDP Systems) 3866 C18 Series 8GB
Patriot Memory (PDP Systems) 3866 C18 Series 8GB
内存RAM
Kingston 2GB-DDR2 800Mhz 2GB
Kingston 2GB-DDR2 800Mhz 2GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-TF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N
内存RAM
G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F4-3200C16-16GTZN 16GB
G Skill Intl F4-3200C16-16GTZN 16GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Smart Modular SF4641G8CK8I8HLSBG 8GB
Smart Modular SF4641G8CK8I8HLSBG 8GB
内存RAM
Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
AMD R744G2400U1S-UO 4GB
AMD R744G2400U1S-UO 4GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
G Skill Intl F4-2666C16-4GRB 4GB
G Skill Intl F4-2666C16-4GRB 4GB
内存RAM
Samsung M3 78T2863EHS-CF7 1GB
Samsung M3 78T2863EHS-CF7 1GB
Essencore Limited IM4AGU88N24-FFFHA0 16GB
Essencore Limited IM4AGU88N24-FFFHA0 16GB
内存RAM
Samsung M4 70T2864QZ3-CF7 1GB
Samsung M4 70T2864QZ3-CF7 1GB
G Skill Intl F4-3200C16-16GVR 16GB
G Skill Intl F4-3200C16-16GVR 16GB
内存RAM
Kingston 99U5429-007.A00LF 2GB
Kingston 99U5429-007.A00LF 2GB
Corsair CMK32GX4M1A2666C16 32GB
Corsair CMK32GX4M1A2666C16 32GB
内存RAM