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PNY Electronics PNY 2GB
A-DATA Technology AO1P32MCST2-BW4S 16GB
比较
PNY Electronics PNY 2GB vs A-DATA Technology AO1P32MCST2-BW4S 16GB
总分
PNY Electronics PNY 2GB
总分
A-DATA Technology AO1P32MCST2-BW4S 16GB
差异
规格
评论
差异
需要考虑的原因
PNY Electronics PNY 2GB
报告一个错误
低于PassMark测试中的延时,ns
27
33
左右 18% 更低的延时
需要考虑的原因
A-DATA Technology AO1P32MCST2-BW4S 16GB
报告一个错误
更快的读取速度,GB/s
17.6
13.8
测试中的平均数值
更快的写入速度,GB/s
15.6
8.4
测试中的平均数值
更高的内存带宽,mbps
21300
10600
左右 2.01 更高的带宽
规格
完整的技术规格清单
PNY Electronics PNY 2GB
A-DATA Technology AO1P32MCST2-BW4S 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
27
33
读取速度,GB/s
13.8
17.6
写入速度,GB/s
8.4
15.6
内存带宽,mbps
10600
21300
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 8 9
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2274
3510
PNY Electronics PNY 2GB RAM的比较
Kingston 9965426-130.A00LF 4GB
Carry Technology Co. Ltd. U3A2G73-13G9HE2B00 2GB
A-DATA Technology AO1P32MCST2-BW4S 16GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Apacer Technology AQD-D4U8GN24-SE 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
PNY Electronics PNY 2GB
A-DATA Technology AO1P32MCST2-BW4S 16GB
Samsung M393B1G70QH0-YK0 8GB
Samsung M393A2G40DBD-CP1???? 16GB
PNY Electronics PNY 2GB
Kingston KH2400C15D4/8 8GB
Crucial Technology BLS8G3N18AES4.16FE 8GB
Kingston KHX3000C16/16GX 16GB
Samsung M3 78T2863EHS-CF7 1GB
Kingston 9905598-028.A00G 8GB
TwinMOS 8DPT5MK8-TATP 2GB
G Skill Intl F4-3466C16-4GVK 4GB
Crucial Technology CT102464BA160B.M16 8GB
Kingston KF3200C16D4/8GX 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingmax Semiconductor GLAF62F-D8---------- 4GB
Team Group Inc. UD5-6400 16GB
Kingston CBD24D4S7D8MA-16 16GB
Crucial Technology CT51264BD1339.M16F 4GB
G Skill Intl F4-3200C14-32GVK 32GB
Samsung M471B5673FH0-CF8 2GB
Apacer Technology 78.B1GN3.4032B 4GB
Crucial Technology CT25664AA800.M16FM 2GB
Micron Technology 16ATF1G64AZ-2G1A2 8GB
Samsung M393B1K70CH0-CH9 8GB
G Skill Intl F4-3200C16-16GTZSK 16GB
Crucial Technology CT51264BA1339.C16F 4GB
Samsung V-GeN D4S4GL32A8TL 4GB
报告一个错误
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Bug description
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