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PNY Electronics PNY 2GB
A-DATA Technology DDR4 3300 2OZ 4GB

PNY Electronics PNY 2GB vs A-DATA Technology DDR4 3300 2OZ 4GB

总分
star star star star star
PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

总分
star star star star star
A-DATA Technology DDR4 3300 2OZ 4GB

A-DATA Technology DDR4 3300 2OZ 4GB

差异 规格 评论

差异

PNY Electronics PNY 2GB 需要考虑的原因
PNY Electronics PNY 2GB
报告一个错误
A-DATA Technology DDR4 3300 2OZ 4GB 需要考虑的原因
A-DATA Technology DDR4 3300 2OZ 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    17 left arrow 27
    左右 -59% 更低的延时
  • 更快的读取速度，GB/s
    22 left arrow 13.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    17.0 left arrow 8.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
PNY Electronics PNY 2GB
A-DATA Technology DDR4 3300 2OZ 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 17
  • 读取速度，GB/s
    13.8 left arrow 22.0
  • 写入速度，GB/s
    8.4 left arrow 17.0
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2274 left arrow 3731

PNY Electronics PNY 2GB RAM的比较

Kingston 9965426-130.A00LF 4GB
Carry Technology Co. Ltd. U3A2G73-13G9HE2B00 2GB

A-DATA Technology DDR4 3300 2OZ 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
TwinMOS 8DPT5MK8-TATP 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
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Micron Technology 72ASS4G72LZ-2G1A1 32GB
内存RAM
SK Hynix HMT151R7TFR4C-H9 4GB
SK Hynix HMT151R7TFR4C-H9 4GB
Micron Technology 18ASF1G72PDZ-2G6B1 8GB
Micron Technology 18ASF1G72PDZ-2G6B1 8GB
内存RAM
Kingston ACR16D3LS1NGG/2G 2GB
Kingston ACR16D3LS1NGG/2G 2GB
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Kingston 9905711-038.A00G 8GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Crucial Technology BLS16G4D32AESB.M16FE 16GB
Crucial Technology BLS16G4D32AESB.M16FE 16GB
内存RAM
Patriot Memory (PDP Systems) PSD34G16002 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Samsung M393A5143DB0-CRC 4GB
Samsung M393A5143DB0-CRC 4GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CMD32GX4M2C3200C16 16GB
Corsair CMD32GX4M2C3200C16 16GB
内存RAM
A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology DOVF1B163G2G 2GB
DSL Memory D4SS1G082SH21A-B 16GB
DSL Memory D4SS1G082SH21A-B 16GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Kingston 9905702-184.A00G 8GB
Kingston 9905702-184.A00G 8GB
内存RAM
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Crucial Technology BL32G32C16U4B.M16FB1 32GB
Crucial Technology BL32G32C16U4B.M16FB1 32GB
内存RAM
Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
Samsung M378A1K43BB1-CPB 8GB
Samsung M378A1K43BB1-CPB 8GB
内存RAM
Kingston 9905469-143.A00LF 4GB
Kingston 9905469-143.A00LF 4GB
Crucial Technology BLS8G4D26BFSC.16FE 8GB
Crucial Technology BLS8G4D26BFSC.16FE 8GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
Samsung M386A4G40DM1-CRC 32GB
Samsung M386A4G40DM1-CRC 32GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS8G4S26BFSD.16FD2 8GB
Crucial Technology BLS8G4S26BFSD.16FD2 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Patriot Memory (PDP Systems) 4133 C19 Series 8GB
Patriot Memory (PDP Systems) 4133 C19 Series 8GB
内存RAM