PNY Electronics PNY 2GB vs Corsair CM4X4GF2666Z16K4 4GB

总分

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

总分

Corsair CM4X4GF2666Z16K4 4GB

Corsair CM4X4GF2666Z16K4 4GB

差异规格评论

差异

PNY Electronics PNY 2GB

需要考虑的原因
PNY Electronics PNY 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 46

左右 41% 更低的延时
更快的读取速度，GB/s

13.8 11.4

测试中的平均数值

Corsair CM4X4GF2666Z16K4 4GB

需要考虑的原因
Corsair CM4X4GF2666Z16K4 4GB

报告一个错误

更快的写入速度，GB/s

12.3 8.4

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

PNY Electronics PNY 2GB

Corsair CM4X4GF2666Z16K4 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 46
读取速度，GB/s

13.8 11.4
写入速度，GB/s

8.4 12.3
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-21300, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2274 2541

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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G Skill Intl F4-3200C14-8GFX 8GB

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PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Corsair CM4X4GF2666Z16K4 4GB

Corsair CM4X4GF2666Z16K4 4GB

Samsung M471B5673FH0-CF8 2GB

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G Skill Intl F5-5600J4040C16G 16GB

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TwinMOS 8DPT5MK8-TATP 2GB

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Kingston ACR512X64D3S13C9G 4GB

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Kingston 9965669-005.A01G 16GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

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Corsair CM4B8G7L2666A16K2-O 8GB

Kingston 9905403-090.A01LF 4GB

Kingston 9905403-090.A01LF 4GB

SK Hynix HMA82GU6CJR8N-XN 16GB

SK Hynix HMA82GU6CJR8N-XN 16GB

Crucial Technology BLS8G3N18AES4.16FE 8GB

Crucial Technology BLS8G3N18AES4.16FE 8GB

Corsair CMV16GX4M1L2400C16 16GB

Corsair CMV16GX4M1L2400C16 16GB