PNY Electronics PNY 2GB vs Corsair CMK4GX4M1D2400C14 4GB

总分

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

总分

Corsair CMK4GX4M1D2400C14 4GB

Corsair CMK4GX4M1D2400C14 4GB

差异规格评论

差异

PNY Electronics PNY 2GB

需要考虑的原因
PNY Electronics PNY 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 72

左右 63% 更低的延时
更快的写入速度，GB/s

8.4 7.8

测试中的平均数值

Corsair CMK4GX4M1D2400C14 4GB

需要考虑的原因
Corsair CMK4GX4M1D2400C14 4GB

报告一个错误

更快的读取速度，GB/s

15.4 13.8

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

PNY Electronics PNY 2GB

Corsair CMK4GX4M1D2400C14 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 72
读取速度，GB/s

13.8 15.4
写入速度，GB/s

8.4 7.8
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2274 1682

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Nanya Technology M2F4GH64CB8HB6N-CG 4GB

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G Skill Intl F4-3200C15-8GTZKY 8GB

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Crucial Technology BL8G32C16S4B.8FE 8GB

Crucial Technology BL8G32C16S4B.8FE 8GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Corsair CMK8GX4M1Z3600C18 8GB

Corsair CMK8GX4M1Z3600C18 8GB

Kingston 9965516-430.A00G 16GB

Kingston 9965516-430.A00G 16GB

G Skill Intl F4-4266C17-8GTZRB 8GB

G Skill Intl F4-4266C17-8GTZRB 8GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

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G Skill Intl F4-3600C14-16GVKA 16GB

SK Hynix HMT151R7TFR4C-H9 4GB

SK Hynix HMT151R7TFR4C-H9 4GB

Wilk Elektronik S.A. GR2400D464L17S/4G 4GB

Wilk Elektronik S.A. GR2400D464L17S/4G 4GB