PNY Electronics PNY 2GB vs Corsair CMT64GX4M8C3200C16 8GB

总分

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

总分

Corsair CMT64GX4M8C3200C16 8GB

Corsair CMT64GX4M8C3200C16 8GB

差异规格评论

差异

PNY Electronics PNY 2GB

需要考虑的原因
PNY Electronics PNY 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 39

左右 31% 更低的延时

Corsair CMT64GX4M8C3200C16 8GB

需要考虑的原因
Corsair CMT64GX4M8C3200C16 8GB

报告一个错误

更快的读取速度，GB/s

15.2 13.8

测试中的平均数值
更快的写入速度，GB/s

14.8 8.4

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

PNY Electronics PNY 2GB

Corsair CMT64GX4M8C3200C16 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 39
读取速度，GB/s

13.8 15.2
写入速度，GB/s

8.4 14.8
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2274 2878

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Chun Well Technology Holding Limited D4U1636144B 16GB

Samsung M471B5173QH0-YK0 4GB

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G Skill Intl F4-2400C16-8GRS 8GB

G Skill Intl F4-2400C16-8GRS 8GB

Hexon Technology Pte Ltd HEXON 1GB

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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Crucial Technology CT4G4SFS824A.M8FB 4GB

Crucial Technology CT4G4SFS824A.M8FB 4GB