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PNY Electronics PNY 2GB
G Skill Intl F4-2400C14-4GRK 4GB

PNY Electronics PNY 2GB vs G Skill Intl F4-2400C14-4GRK 4GB

总分
star star star star star
PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

总分
star star star star star
G Skill Intl F4-2400C14-4GRK 4GB

G Skill Intl F4-2400C14-4GRK 4GB

差异 规格 评论

差异

PNY Electronics PNY 2GB 需要考虑的原因
PNY Electronics PNY 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 32
    左右 16% 更低的延时
G Skill Intl F4-2400C14-4GRK 4GB 需要考虑的原因
G Skill Intl F4-2400C14-4GRK 4GB
报告一个错误
  • 更快的读取速度，GB/s
    15.8 left arrow 13.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.0 left arrow 8.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
PNY Electronics PNY 2GB
G Skill Intl F4-2400C14-4GRK 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 32
  • 读取速度，GB/s
    13.8 left arrow 15.8
  • 写入速度，GB/s
    8.4 left arrow 12.0
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2274 left arrow 3038

PNY Electronics PNY 2GB RAM的比较

Kingston 9965426-130.A00LF 4GB
Carry Technology Co. Ltd. U3A2G73-13G9HE2B00 2GB

G Skill Intl F4-2400C14-4GRK 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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PNY Electronics PNY 2GB
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G Skill Intl F4-2400C14-4GRK 4GB
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内存RAM
Samsung M378B5173BH0-CH9 4GB
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内存RAM
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内存RAM
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内存RAM
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内存RAM
Crucial Technology CT51264AC800.C16FC 4GB
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内存RAM
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Corsair CMK64GX4M2D3000C16 32GB
内存RAM
AMD AE34G1601U1 4GB
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G Skill Intl F4-3600C19-8GTZRB 8GB
内存RAM
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内存RAM
Kingston 99U5403-036.A00G 4GB
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Samsung M471A2K43EB1-CWE 16GB
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内存RAM
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Essencore Limited KD48GU88C-26N1600 8GB
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内存RAM
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STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Kingston KH280C14D4/8X 8GB
Kingston KH280C14D4/8X 8GB
内存RAM