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PNY Electronics PNY 2GB
Gold Key Technology Co Ltd NMUD480E84-3000D 8GB
比较
PNY Electronics PNY 2GB vs Gold Key Technology Co Ltd NMUD480E84-3000D 8GB
总分
PNY Electronics PNY 2GB
总分
Gold Key Technology Co Ltd NMUD480E84-3000D 8GB
差异
规格
评论
差异
需要考虑的原因
PNY Electronics PNY 2GB
报告一个错误
需要考虑的原因
Gold Key Technology Co Ltd NMUD480E84-3000D 8GB
报告一个错误
更快的读取速度,GB/s
17.3
13.8
测试中的平均数值
更快的写入速度,GB/s
14.6
8.4
测试中的平均数值
更高的内存带宽,mbps
19200
10600
左右 1.81 更高的带宽
规格
完整的技术规格清单
PNY Electronics PNY 2GB
Gold Key Technology Co Ltd NMUD480E84-3000D 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
27
27
读取速度,GB/s
13.8
17.3
写入速度,GB/s
8.4
14.6
内存带宽,mbps
10600
19200
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 8 9
PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
时序/时钟速度
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2274
3460
PNY Electronics PNY 2GB RAM的比较
Kingston 9965426-130.A00LF 4GB
Carry Technology Co. Ltd. U3A2G73-13G9HE2B00 2GB
Gold Key Technology Co Ltd NMUD480E84-3000D 8GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M471B1G73DB0-YK0 8GB
G Skill Intl F4-2133C15-16GIS 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology BLS8G4S240FSD.16FBD2 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Crucial Technology CT8G4SFS824A.M8FE 8GB
Samsung M378B5173BH0-CH9 4GB
Crucial Technology CT8G4SFD8213.C16FBR2 8GB
Kingston 9905624-051.A00G 8GB
Samsung M471A5244CB0-CRC 4GB
Hexon Technology Pte Ltd HEXON 1GB
Patriot Memory (PDP Systems) 3733 C17 Series 8GB
TwinMOS 8DHE3MN8-HATP 2GB
Avant Technology J641GU42J5213N0 8GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Crucial Technology BLS8G4D240FSBK.8FD 8GB
Crucial Technology BLT2G3D1608DT1TX0 2GB
SK Hynix HMAA1GU6CJR6N-XN 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Carry Technology Co. Ltd. 4DCC3IOGE-MATP 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMSX16GX4M1A2666C18 16GB
Kingston 9905403-090.A01LF 4GB
G Skill Intl F4-2400C14-4GRK 4GB
AMD R538G1601U2S 8GB
Kingston ACR26D4S9S1ME-4 4GB
Samsung M3 93T5750CZA-CE6 2GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR8N
报告一个错误
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Bug description
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