PNY Electronics PNY 2GB vs Micron Technology CT8G4DFD8213.16FA11 8GB

总分

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

总分

Micron Technology CT8G4DFD8213.16FA11 8GB

Micron Technology CT8G4DFD8213.16FA11 8GB

差异规格评论

差异

PNY Electronics PNY 2GB

需要考虑的原因
PNY Electronics PNY 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 28

左右 4% 更低的延时
更快的读取速度，GB/s

13.8 12

测试中的平均数值

Micron Technology CT8G4DFD8213.16FA11 8GB

需要考虑的原因
Micron Technology CT8G4DFD8213.16FA11 8GB

报告一个错误

更快的写入速度，GB/s

9.1 8.4

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

PNY Electronics PNY 2GB

Micron Technology CT8G4DFD8213.16FA11 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 28
读取速度，GB/s

13.8 12.0
写入速度，GB/s

8.4 9.1
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2274 2347

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 9905622-075.A00G 8GB

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PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Micron Technology CT8G4DFD8213.16FA11 8GB

Micron Technology CT8G4DFD8213.16FA11 8GB

Kingston KHX318C10FR/8G 8GB

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SK Hynix V-GeN D4H4GL30A8TX5 4GB

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Corsair CMD8GX3M2A2933C12 4GB

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Samsung M47472K43DB1-CTD 16GB

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Corsair CMK32GX4M2L3200C16 16GB

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Elpida EBJ41UF8BDU5-GN-F 4GB

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Samsung M393B1K70CHD-CH9 8GB

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G Skill Intl F4-2666C19-16GRS 16GB

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Kingston 9905403-447.A00LF 4GB

Kingston 9905403-447.A00LF 4GB

Crucial Technology CT4G4DFS8213.C8FDD2 4GB

Crucial Technology CT4G4DFS8213.C8FDD2 4GB

Samsung M393B2G70BH0-CH9 16GB

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Corsair CMK8GX4M2B3866C18 4GB

Corsair CMK8GX4M2B3866C18 4GB

Samsung M471B5674QH0-YK0 2GB

Samsung M471B5674QH0-YK0 2GB

Kingston XJ69DF-MIE2 8GB

Kingston XJ69DF-MIE2 8GB

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Corsair CMZ16GX3M2A2400C10 8GB

Corsair CM4X16GE2400C16K4 16GB

Corsair CM4X16GE2400C16K4 16GB