RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
PNY Electronics PNY 2GB
SK Hynix HMA81GU6CJR8N-VK 8GB

PNY Electronics PNY 2GB vs SK Hynix HMA81GU6CJR8N-VK 8GB

总分
star star star star star
PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

总分
star star star star star
SK Hynix HMA81GU6CJR8N-VK 8GB

SK Hynix HMA81GU6CJR8N-VK 8GB

差异 规格 评论

差异

PNY Electronics PNY 2GB 需要考虑的原因
PNY Electronics PNY 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 35
    左右 23% 更低的延时
SK Hynix HMA81GU6CJR8N-VK 8GB 需要考虑的原因
SK Hynix HMA81GU6CJR8N-VK 8GB
报告一个错误
  • 更快的读取速度，GB/s
    15.5 left arrow 13.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.6 left arrow 8.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
PNY Electronics PNY 2GB
SK Hynix HMA81GU6CJR8N-VK 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 35
  • 读取速度，GB/s
    13.8 left arrow 15.5
  • 写入速度，GB/s
    8.4 left arrow 11.6
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2274 left arrow 2822

PNY Electronics PNY 2GB RAM的比较

Kingston 9965426-130.A00LF 4GB
Carry Technology Co. Ltd. U3A2G73-13G9HE2B00 2GB

SK Hynix HMA81GU6CJR8N-VK 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
SanMax Technologies Inc. SMD-8G28HP-21P 8GB
SanMax Technologies Inc. SMD-8G28HP-21P 8GB
内存RAM
Kingston 9965525-140.A00LF 8GB
Kingston 9965525-140.A00LF 8GB
G Skill Intl F4-2400C15-8GVS 8GB
G Skill Intl F4-2400C15-8GVS 8GB
内存RAM
Kingston KHX1600C9D3/4G 4GB
Kingston KHX1600C9D3/4G 4GB
Corsair CMK32GX4M2D3600C18 16GB
Corsair CMK32GX4M2D3600C18 16GB
内存RAM
Kingston 9905471-002.A00LF 2GB
Kingston 9905471-002.A00LF 2GB
Crucial Technology BLS8G4D26BFSBK.8FD 8GB
Crucial Technology BLS8G4D26BFSBK.8FD 8GB
内存RAM
Kingston 99U5474-013.A00LF 2GB
Kingston 99U5474-013.A00LF 2GB
A-DATA Technology DDR4 2800 2OZ 4GB
A-DATA Technology DDR4 2800 2OZ 4GB
内存RAM
Kingston 9905403-156.A00LF 2GB
Kingston 9905403-156.A00LF 2GB
Crucial Technology BL16G30C15U4B.M16FE1 16GB
Crucial Technology BL16G30C15U4B.M16FE1 16GB
内存RAM
Kingston KHX2800C14D4/8GX 8GB
Kingston KHX2800C14D4/8GX 8GB
G Skill Intl F4-2133C15-8GFX 8GB
G Skill Intl F4-2133C15-8GFX 8GB
内存RAM
Samsung M471B5673FH0-CH9 2GB
Samsung M471B5673FH0-CH9 2GB
Crucial Technology CT8G4SFRA266.M8FJ 8GB
Crucial Technology CT8G4SFRA266.M8FJ 8GB
内存RAM
Corsair CMSO4GX3M1A1600C11 4GB
Corsair CMSO4GX3M1A1600C11 4GB
Panram International Corporation W4N2666PS-8G 8GB
Panram International Corporation W4N2666PS-8G 8GB
内存RAM
AMD R538G1601U2S-UO 8GB
AMD R538G1601U2S-UO 8GB
Mushkin 99[2/7/4]192[F/T] 4GB
Mushkin 99[2/7/4]192[F/T] 4GB
内存RAM
SK Hynix HMT42GR7AFR4A-PB 16GB
SK Hynix HMT42GR7AFR4A-PB 16GB
Micron Technology 8ATF1G64AZ-2G3H1 8GB
Micron Technology 8ATF1G64AZ-2G3H1 8GB
内存RAM
Corsair CM3X8GA2400C11Y2R 8GB
Corsair CM3X8GA2400C11Y2R 8GB
Kingston 9905713-004.A00G 4GB
Kingston 9905713-004.A00G 4GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Crucial Technology BLE4G4D26AFEA.8FBD 4GB
Crucial Technology BLE4G4D26AFEA.8FBD 4GB
内存RAM
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
Kingston 9905713-001.A00G 4GB
Kingston 9905713-001.A00G 4GB
内存RAM