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Qimonda 72T128420EFA3SB2 1GB
Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB
比较
Qimonda 72T128420EFA3SB2 1GB vs Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB
总分
Qimonda 72T128420EFA3SB2 1GB
总分
Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB
差异
规格
评论
差异
需要考虑的原因
Qimonda 72T128420EFA3SB2 1GB
报告一个错误
更快的读取速度,GB/s
3
19.4
测试中的平均数值
更快的写入速度,GB/s
2,069.2
16.3
测试中的平均数值
需要考虑的原因
Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB
报告一个错误
低于PassMark测试中的延时,ns
32
106
左右 -231% 更低的延时
更高的内存带宽,mbps
21300
5300
左右 4.02 更高的带宽
规格
完整的技术规格清单
Qimonda 72T128420EFA3SB2 1GB
Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
106
32
读取速度,GB/s
3,273.7
19.4
写入速度,GB/s
2,069.2
16.3
内存带宽,mbps
5300
21300
Other
描述
PC-5300, PS1: 1.5V, PS2: 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
no data
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
734
3726
Qimonda 72T128420EFA3SB2 1GB RAM的比较
Qimonda 72T128401EFA3SC2 512MB
Kingston KP6FH5-MIE 32GB
Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Smart Modular SG564568FG8N6KF-Z2 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N
Kingston 9905471-006.A01LF 4GB
Samsung M378A1K43DB2-CTD 8GB
Samsung M471B5273EB0-CK0 4GB
Patriot Memory (PDP Systems) 3000 C18 Series 16GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Kingston 9905678-110.A00G 8GB
Kingston 9905403-156.A00LF 2GB
Micron Technology 16ATF2G64AZ-2G6B1 16GB
G Skill Intl F4-4500C19-8GTZSWE 8GB
Kingston KHX2133C14/8G 8GB
Mushkin 991988 (996988) 4GB
Golden Empire CL19-25-25 D4-4000 4GB
Elpida EBJ81UG8BBU0-GN-F 8GB
Kingston KHX2400C15S4/4G 4GB
Samsung M391B5673EH1-CH9 2GB
Crucial Technology CT8G4DFS832A.M8FJ 8GB
Kingston 9905403-444.A00LF 4GB
Crucial Technology CB8GS2400.C8D 8GB
Samsung M378B5673EH1-CF8 2GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N
Samsung M471A1K43DB1-CWE 8GB
Micron Technology 8ATF1G64HZ-3G2R1 8GB
Kingston KHX1600C9D3/8G 8GB
Kingston HP24D4U7S8MD-8 8GB
Micron Technology 18HTF12872AY-800F1 1GB
Samsung V-GeN D4S4GL30A16TS5 4GB
报告一个错误
×
Bug description
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