Ramaxel Technology RMN1740HC48D8F667A 2GB vs Neo Forza NMUD416E82-3600 16GB

总分

Ramaxel Technology RMN1740HC48D8F667A 2GB

Ramaxel Technology RMN1740HC48D8F667A 2GB

总分

Neo Forza NMUD416E82-3600 16GB

Neo Forza NMUD416E82-3600 16GB

差异规格评论

差异

Ramaxel Technology RMN1740HC48D8F667A 2GB

需要考虑的原因
Ramaxel Technology RMN1740HC48D8F667A 2GB

报告一个错误

更快的读取速度，GB/s

4 19.6

测试中的平均数值

Neo Forza NMUD416E82-3600 16GB

需要考虑的原因
Neo Forza NMUD416E82-3600 16GB

报告一个错误

低于PassMark测试中的延时，ns

27 55

左右 -104% 更低的延时
更快的写入速度，GB/s

16.0 1,622.4

测试中的平均数值
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

Ramaxel Technology RMN1740HC48D8F667A 2GB

Neo Forza NMUD416E82-3600 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

55 27
读取速度，GB/s

4,098.0 19.6
写入速度，GB/s

1,622.4 16.0
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

628 3909

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Ramaxel Technology RMN1740HC48D8F667A 2GB

Ramaxel Technology RMN1740HC48D8F667A 2GB

Neo Forza NMUD416E82-3600 16GB

Neo Forza NMUD416E82-3600 16GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Corsair CM4X16GE2933C19S2 16MB

Corsair CM4X16GE2933C19S2 16MB

Kingston 9965525-018.A00LF 4GB

Kingston 9965525-018.A00LF 4GB

G Skill Intl F4-3600C16-16GTZN 16GB

G Skill Intl F4-3600C16-16GTZN 16GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Avexir Technologies Corporation DDR4-2666 CL15 4GB 4GB

Avexir Technologies Corporation DDR4-2666 CL15 4GB 4GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

G Skill Intl F4-3200C16-8GTZKY 8GB

G Skill Intl F4-3200C16-8GTZKY 8GB

Kingston 9905584-016.A00LF 4GB

Kingston 9905584-016.A00LF 4GB

G Skill Intl F4-3866C18-8GTZSW 8GB

G Skill Intl F4-3866C18-8GTZSW 8GB

Team Group Inc. Vulcan-1600 4GB

Team Group Inc. Vulcan-1600 4GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-VK 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

Crucial Technology BL16G32C16U4RL.M8FB1 16GB

Crucial Technology BL16G32C16U4RL.M8FB1 16GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Crucial Technology BLS8G4D26BFSBK.8FD 8GB

Crucial Technology BLS8G4D26BFSBK.8FD 8GB

Samsung M378B1G73EB0-CK0 8GB

Samsung M378B1G73EB0-CK0 8GB

Corsair CMW16GX4M1D3000C16 16GB

Corsair CMW16GX4M1D3000C16 16GB

Crucial Technology BLS8G4D26BFSE.16FBD2 8GB

Crucial Technology BLS8G4D26BFSE.16FBD2 8GB

Crucial Technology CT4G4DFS8213.C8FHP 4GB

Crucial Technology CT4G4DFS8213.C8FHP 4GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

G Skill Intl F4-3200C16-16GFX 16GB

G Skill Intl F4-3200C16-16GFX 16GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Asgard VMA42UH-MEC1U2AJ2 16GB

Asgard VMA42UH-MEC1U2AJ2 16GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Crucial Technology CT8G4SFRA266.M8FJ 8GB

Crucial Technology CT8G4SFRA266.M8FJ 8GB