Ramaxel Technology RMR5030ME68F9F1600 4GB vs G Skill Intl F4-3200C14-16GVR 16GB

总分

Ramaxel Technology RMR5030ME68F9F1600 4GB

Ramaxel Technology RMR5030ME68F9F1600 4GB

总分

G Skill Intl F4-3200C14-16GVR 16GB

G Skill Intl F4-3200C14-16GVR 16GB

差异规格评论

差异

Ramaxel Technology RMR5030ME68F9F1600 4GB

需要考虑的原因
Ramaxel Technology RMR5030ME68F9F1600 4GB

报告一个错误

G Skill Intl F4-3200C14-16GVR 16GB

需要考虑的原因
G Skill Intl F4-3200C14-16GVR 16GB

报告一个错误

低于PassMark测试中的延时，ns

25 42

左右 -68% 更低的延时
更快的读取速度，GB/s

19.4 13.2

测试中的平均数值
更快的写入速度，GB/s

16.1 7.8

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Ramaxel Technology RMR5030ME68F9F1600 4GB

G Skill Intl F4-3200C14-16GVR 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 25
读取速度，GB/s

13.2 19.4
写入速度，GB/s

7.8 16.1
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2001 3912

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BL8G32C16S4B.M8FE1 8GB

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Samsung 1600 CL10 Series 8GB

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G Skill Intl F4-3200C16-16GFX 16GB

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Samsung M378B5673EH1-CF8 2GB

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Hexon Technology Pte Ltd HEXON 1GB

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Panram International Corporation W4N2400PS-8G 8GB

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Kingston 99U5474-038.A00LF 4GB

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Swissbit MEU25664D6BC2EP-30 2GB

Swissbit MEU25664D6BC2EP-30 2GB

Crucial Technology CT8G4SFS632A.C4FE 8GB

Crucial Technology CT8G4SFS632A.C4FE 8GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Micron Technology 8ATF1G64HZ-3G2E1 8GB

Micron Technology 8ATF1G64HZ-3G2E1 8GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

A-DATA Technology DDR4 3600 2OZ 8GB

A-DATA Technology DDR4 3600 2OZ 8GB