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Ramaxel Technology RMR5040ED58E9W1600 4GB
Samsung V-GeN D4S16GL26A8TL6 16GB
比较
Ramaxel Technology RMR5040ED58E9W1600 4GB vs Samsung V-GeN D4S16GL26A8TL6 16GB
总分
Ramaxel Technology RMR5040ED58E9W1600 4GB
总分
Samsung V-GeN D4S16GL26A8TL6 16GB
差异
规格
评论
差异
需要考虑的原因
Ramaxel Technology RMR5040ED58E9W1600 4GB
报告一个错误
需要考虑的原因
Samsung V-GeN D4S16GL26A8TL6 16GB
报告一个错误
低于PassMark测试中的延时,ns
32
43
左右 -34% 更低的延时
更快的读取速度,GB/s
16
13.2
测试中的平均数值
更快的写入速度,GB/s
13.4
9.3
测试中的平均数值
更高的内存带宽,mbps
19200
12800
左右 1.5 更高的带宽
规格
完整的技术规格清单
Ramaxel Technology RMR5040ED58E9W1600 4GB
Samsung V-GeN D4S16GL26A8TL6 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
43
32
读取速度,GB/s
13.2
16.0
写入速度,GB/s
9.3
13.4
内存带宽,mbps
12800
19200
Other
描述
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2285
1897
Ramaxel Technology RMR5040ED58E9W1600 4GB RAM的比较
G Skill Intl F3-1600C11-8GISL 8GB
A-DATA Technology DDR4 4133 8GB
Samsung V-GeN D4S16GL26A8TL6 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston KVR533D2N4 512MB
Micron Technology ILG8GS2400A 8GB
Samsung M471A1G44BB0-CWE 8GB
Corsair CMSX16GX4M2A3200C22 8GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Crucial Technology BL16G30C15U4B.M16FE1 16GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
Hynix Semiconductor (Hyundai Electronics) HMA82GR7AFR8N
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Kingston KHX3200C16D4/4GX 4GB
Samsung M3 93T5750CZA-CE6 2GB
SK Hynix HMA84GR7MFR4N-TF 32GB
Kingston 9905403-444.A00LF 4GB
Corsair CMK64GX4M8X4000C19 8GB
Kingston 9905471-006.A00LF 4GB
Micron Technology 9ASF1G72AZ-2G3B1 8GB
Kingston 99U5474-028.A00LF 4GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB
SK Hynix HMT351S6CFR8C-PB 4GB
Micron Technology 9ASF51272PZ-2G3B1 4GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
G Skill Intl F4-4000C17-16GTRGB 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Jinyu CL16-16-16 D4-2400 8GB
Samsung M471B5673FH0-CF8 2GB
Kingston 9905678-044.A00G 8GB
SK Hynix DDR2 800 2G 2GB
A-DATA Technology DDR4 2666 8GB
报告一个错误
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Bug description
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