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Ramaxel Technology RMT3010EC58E8F1333 2GB
A-DATA Technology AO1P21FC8T1-BSKS 8GB

Ramaxel Technology RMT3010EC58E8F1333 2GB vs A-DATA Technology AO1P21FC8T1-BSKS 8GB

总分
star star star star star
Ramaxel Technology RMT3010EC58E8F1333 2GB

Ramaxel Technology RMT3010EC58E8F1333 2GB

总分
star star star star star
A-DATA Technology AO1P21FC8T1-BSKS 8GB

A-DATA Technology AO1P21FC8T1-BSKS 8GB

差异 规格 评论

差异

Ramaxel Technology RMT3010EC58E8F1333 2GB 需要考虑的原因
Ramaxel Technology RMT3010EC58E8F1333 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 36
    左右 28% 更低的延时
A-DATA Technology AO1P21FC8T1-BSKS 8GB 需要考虑的原因
A-DATA Technology AO1P21FC8T1-BSKS 8GB
报告一个错误
  • 更快的读取速度，GB/s
    13.6 left arrow 13.5
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.7 left arrow 7.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Ramaxel Technology RMT3010EC58E8F1333 2GB
A-DATA Technology AO1P21FC8T1-BSKS 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 36
  • 读取速度，GB/s
    13.5 left arrow 13.6
  • 写入速度，GB/s
    7.8 left arrow 8.7
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1932 left arrow 2231

Ramaxel Technology RMT3010EC58E8F1333 2GB RAM的比较

Nanya Technology M2S2G64CB88G5N-DI 2GB
Micron Technology 16ATF1G64AZ-2G1A1 8GB

A-DATA Technology AO1P21FC8T1-BSKS 8GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Ramaxel Technology RMT3010EC58E8F1333 2GB
Ramaxel Technology RMT3010EC58E8F1333 2GB
A-DATA Technology AO1P21FC8T1-BSKS 8GB
A-DATA Technology AO1P21FC8T1-BSKS 8GB
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Samsung M471B5673FH0-CF8 2GB
Samsung M471B5673FH0-CF8 2GB
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G Skill Intl F4-3000C15-8GVKB 8GB
内存RAM
Nanya Technology M2F4G64CB8HG5N-CG 4GB
Nanya Technology M2F4G64CB8HG5N-CG 4GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
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Samsung M378A1G43DB0-CPB 8GB
Samsung M378A1G43DB0-CPB 8GB
G Skill Intl F4-3200C16-16GTZKW 16GB
G Skill Intl F4-3200C16-16GTZKW 16GB
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PNY Electronics PNY 2GB
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Samsung DDR3 8GB 1600MHz 8GB
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Essencore Limited KD48GU481-26N1600 8GB
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Samsung M4 70T2953EZ3-CE6 1GB
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内存RAM
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Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
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Samsung V-GeN D4S8GL24A8 8GB
内存RAM
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Samsung M378B5173BH0-CH9 4GB
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Samsung M471A5143EB0-CPB 4GB
内存RAM
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Samsung M4 70T2864QZ3-CF7 1GB
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Samsung M474A2K43BB1-CPB 16GB
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Samsung M391B5673EH1-CH9 2GB
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Corsair CMD8GX4M2B3466C18 4GB
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