Samsung 1600 CL10 Series 8GB vs Corsair CMD16GX4M4B2133C10 4GB

总分

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

总分

Corsair CMD16GX4M4B2133C10 4GB

Corsair CMD16GX4M4B2133C10 4GB

差异规格评论

差异

Samsung 1600 CL10 Series 8GB

需要考虑的原因
Samsung 1600 CL10 Series 8GB

报告一个错误

更快的读取速度，GB/s

16.1 15.8

测试中的平均数值

Corsair CMD16GX4M4B2133C10 4GB

需要考虑的原因
Corsair CMD16GX4M4B2133C10 4GB

报告一个错误

低于PassMark测试中的延时，ns

24 25

左右 -4% 更低的延时
更快的写入速度，GB/s

11.7 10.1

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung 1600 CL10 Series 8GB

Corsair CMD16GX4M4B2133C10 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 24
读取速度，GB/s

16.1 15.8
写入速度，GB/s

10.1 11.7
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2764 2971

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

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G Skill Intl F4-3466C16-4GTZ 4GB

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Corsair CML16GX3M2A1600C10 8GB

Crucial Technology BLS4G4S26BFSD.8FBR2 4GB

Crucial Technology BLS4G4S26BFSD.8FBR2 4GB

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Samsung M393B2G70BH0-CK0 16GB

Avant Technology J644GU44J9266NQ 32GB

Avant Technology J644GU44J9266NQ 32GB

Crucial Technology CT51264AC800.C16FC 4GB

Crucial Technology CT51264AC800.C16FC 4GB

Corsair CMSX64GX4M2A3200C22 32GB

Corsair CMSX64GX4M2A3200C22 32GB

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A-DATA Technology DDR4 3600 8GB