Samsung 1600 CL10 Series 8GB vs Crucial Technology BL16G36C16U4W.M8FB1 16GB

总分

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

总分

Crucial Technology BL16G36C16U4W.M8FB1 16GB

Crucial Technology BL16G36C16U4W.M8FB1 16GB

差异规格评论

差异

Samsung 1600 CL10 Series 8GB

需要考虑的原因
Samsung 1600 CL10 Series 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 26

左右 4% 更低的延时

Crucial Technology BL16G36C16U4W.M8FB1 16GB

需要考虑的原因
Crucial Technology BL16G36C16U4W.M8FB1 16GB

报告一个错误

更快的读取速度，GB/s

19.4 16.1

测试中的平均数值
更快的写入速度，GB/s

15.3 10.1

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung 1600 CL10 Series 8GB

Crucial Technology BL16G36C16U4W.M8FB1 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 26
读取速度，GB/s

16.1 19.4
写入速度，GB/s

10.1 15.3
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2764 3783

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Micron Technology 8ATF1G64HZ-3G2J1 8GB

Micron Technology 8ATF1G64HZ-3G2J1 8GB

Micron Technology MTA8ATF1G64HZ-2G3A1 8GB

Micron Technology MTA8ATF1G64HZ-2G3A1 8GB

SK Hynix HMT451S6BFR8A-PB 4GB

SK Hynix HMT451S6BFR8A-PB 4GB

SK Hynix HMA82GS7AFR8N-UH 16GB

SK Hynix HMA82GS7AFR8N-UH 16GB

Team Group Inc. Vulcan-1600 4GB

Team Group Inc. Vulcan-1600 4GB

G Skill Intl F4-3200C16-16GTRG 16GB

G Skill Intl F4-3200C16-16GTRG 16GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

SK Hynix HMA84GL7AFR4N-UH 32GB

SK Hynix HMA84GL7AFR4N-UH 32GB

SK Hynix HMT42GR7AFR4C-RD 16GB

SK Hynix HMT42GR7AFR4C-RD 16GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU7AFR8C-RD 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU7AFR8C

Crucial Technology CT102464BF160B-16F 8GB

Crucial Technology CT102464BF160B-16F 8GB

Corsair CMWX8GD3600C18W2D 8GB

Corsair CMWX8GD3600C18W2D 8GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

G Skill Intl F4-3200C16-8GTRS 8GB

G Skill Intl F4-3200C16-8GTRS 8GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Kingston KF3000C16D4/32GX 32GB

Kingston KF3000C16D4/32GX 32GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

G Skill Intl F4-3000C16-8GTRG 8GB

G Skill Intl F4-3000C16-8GTRG 8GB

Crucial Technology CT51264BF160BJ.C8F 4GB

Crucial Technology CT51264BF160BJ.C8F 4GB

G Skill Intl F4-2666C15-4GRR 4GB

G Skill Intl F4-2666C15-4GRR 4GB

Kingston 9965525-155.A00LF 8GB

Kingston 9965525-155.A00LF 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3200 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3200 8GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

Kingston KHYXPX-HYJ 8GB

Kingston KHYXPX-HYJ 8GB

Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

Crucial Technology CT8G4SFS824A.C8FAD1 8GB

Crucial Technology CT8G4SFS824A.C8FAD1 8GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

Hynix Semiconductor (Hyundai Electronics) HMA82GR7AFR8N-UH 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GR7AFR8N