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Samsung 1600 CL10 Series 8GB
Crucial Technology BLS8G4D240FSA.16FAR 8GB
比较
Samsung 1600 CL10 Series 8GB vs Crucial Technology BLS8G4D240FSA.16FAR 8GB
总分
Samsung 1600 CL10 Series 8GB
总分
Crucial Technology BLS8G4D240FSA.16FAR 8GB
差异
规格
评论
差异
需要考虑的原因
Samsung 1600 CL10 Series 8GB
报告一个错误
低于PassMark测试中的延时,ns
25
34
左右 26% 更低的延时
更快的读取速度,GB/s
16.1
13.8
测试中的平均数值
需要考虑的原因
Crucial Technology BLS8G4D240FSA.16FAR 8GB
报告一个错误
更快的写入速度,GB/s
11.0
10.1
测试中的平均数值
更高的内存带宽,mbps
19200
12800
左右 1.5 更高的带宽
规格
完整的技术规格清单
Samsung 1600 CL10 Series 8GB
Crucial Technology BLS8G4D240FSA.16FAR 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
25
34
读取速度,GB/s
16.1
13.8
写入速度,GB/s
10.1
11.0
内存带宽,mbps
12800
19200
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2764
2920
Samsung 1600 CL10 Series 8GB RAM的比较
G Skill Intl F3-14900CL10-8GBXL 8GB
Samsung 1600 CL10 Series 8GB
Crucial Technology BLS8G4D240FSA.16FAR 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
G Skill Intl F3-1866C8-8GTX 8GB
Wilk Elektronik S.A. W-HK26S16G 16GB
Corsair CMV4GX3M1B1600C11 4GB
Corsair CMK16GX4M4A2400C16 4GB
Kingston 9905471-001.A01LF 2GB
Golden Empire CL16-18-18 D4-2666 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Golden Empire CL16-18-18 D4-3400 4GB
Kingston 9905471-076.A00LF 8GB
G Skill Intl F4-4400C18-8GTZRC 8GB
Samsung 1600 CL10 Series 8GB
Crucial Technology BLS8G4D240FSA.16FAR 8GB
SK Hynix HMT451U7BFR8C-RD 4GB
G Skill Intl F4-4000C18-8GTRG 8GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Samsung M386A8K40CM2-CRC 64GB
Kingston KHX1600C9D3/8G 8GB
Micron Technology 18ASF1G72PDZ-2G3B1 8GB
Kingston 99U5474-038.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N
A-DATA Technology DDR2 800G 2GB
Samsung M378A2K43CB1-CTD 16GB
Kingston ACR512X64D3S13C9G 4GB
Mushkin MRA4S300GJJM16G 16GB
Samsung M4 70T2864QZ3-CF7 1GB
SK Hynix HMA84GR7AFR4N-VK 32GB
Samsung M391B5673EH1-CH9 2GB
Kingston XW21KG-MIE2 8GB
报告一个错误
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Bug description
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