Samsung 1600 CL10 Series 8GB vs Galaxy Microsystems Ltd. GALAX OC LAB 8GB

总分

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

总分

Galaxy Microsystems Ltd. GALAX OC LAB 8GB

Galaxy Microsystems Ltd. GALAX OC LAB 8GB

差异规格评论

差异

Samsung 1600 CL10 Series 8GB

需要考虑的原因
Samsung 1600 CL10 Series 8GB

报告一个错误

Galaxy Microsystems Ltd. GALAX OC LAB 8GB

需要考虑的原因
Galaxy Microsystems Ltd. GALAX OC LAB 8GB

报告一个错误

低于PassMark测试中的延时，ns

20 25

左右 -25% 更低的延时
更快的读取速度，GB/s

19.7 16.1

测试中的平均数值
更快的写入速度，GB/s

15.2 10.1

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung 1600 CL10 Series 8GB

Galaxy Microsystems Ltd. GALAX OC LAB 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 20
读取速度，GB/s

16.1 19.7
写入速度，GB/s

10.1 15.2
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2764 3473

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

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Samsung 1600 CL10 Series 8GB

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Galaxy Microsystems Ltd. GALAX OC LAB 8GB

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Mushkin MRA4S320GJJM32G 32GB

Mushkin MRA4S320GJJM32G 32GB

Kingston 9905403-011.A03LF 2GB

Kingston 9905403-011.A03LF 2GB

Avexir Technologies Corporation DDR4-3600 CL17 8GB 8GB

Avexir Technologies Corporation DDR4-3600 CL17 8GB 8GB

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A-DATA Technology DQKD1A08 1GB

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Crucial Technology BL16G30C15U4B.M16FE1 16GB

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G Skill Intl F5-6400J3239G16G 16GB

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Crucial Technology CT8G4DFD8213.C16FADP 8GB