Samsung 1600 CL10 Series 8GB vs Kingston KF2666C16D4/16G 16GB

总分

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

总分

Kingston KF2666C16D4/16G 16GB

Kingston KF2666C16D4/16G 16GB

差异规格评论

差异

Samsung 1600 CL10 Series 8GB

需要考虑的原因
Samsung 1600 CL10 Series 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 35

左右 29% 更低的延时

Kingston KF2666C16D4/16G 16GB

需要考虑的原因
Kingston KF2666C16D4/16G 16GB

报告一个错误

更快的读取速度，GB/s

18.4 16.1

测试中的平均数值
更快的写入速度，GB/s

14.2 10.1

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung 1600 CL10 Series 8GB

Kingston KF2666C16D4/16G 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 35
读取速度，GB/s

16.1 18.4
写入速度，GB/s

10.1 14.2
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 9 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2764 3278

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Ramaxel Technology RMT3010EC58E8F1333 2GB

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Apacer Technology 78.CAGQE.C750B 8GB

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Essencore Limited KD48GU88C-26N1600 8GB

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Kingston 9905663-005.A00G 16GB

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Gold Key Technology Co Ltd NMSO416E82-3200E 16GB

Gold Key Technology Co Ltd NMSO416E82-3200E 16GB

Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

Corsair CMD64GX4M4C3200C16 16GB

Corsair CMD64GX4M4C3200C16 16GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

Lexar Co Limited LD4AU016G-H2666G 16GB

Lexar Co Limited LD4AU016G-H2666G 16GB

Samsung M393B1K70QB0-CK0 8GB

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Patriot Memory (PDP Systems) PSD38G16002 8GB

Patriot Memory (PDP Systems) PSD38G16002 8GB

G Skill Intl F4-3000C16-8GTRG 8GB

G Skill Intl F4-3000C16-8GTRG 8GB

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Kingston 9905403-444.A00LF 4GB

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Kingston 9965698-001.A00G 16GB