Samsung 1600 CL10 Series 8GB vs Patriot Memory (PDP Systems) 3600 C18 Series 32GB

总分

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

总分

Patriot Memory (PDP Systems) 3600 C18 Series 32GB

Patriot Memory (PDP Systems) 3600 C18 Series 32GB

差异规格评论

差异

Samsung 1600 CL10 Series 8GB

需要考虑的原因
Samsung 1600 CL10 Series 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 30

左右 17% 更低的延时

Patriot Memory (PDP Systems) 3600 C18 Series 32GB

需要考虑的原因
Patriot Memory (PDP Systems) 3600 C18 Series 32GB

报告一个错误

更快的读取速度，GB/s

18.5 16.1

测试中的平均数值
更快的写入速度，GB/s

15.1 10.1

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung 1600 CL10 Series 8GB

Patriot Memory (PDP Systems) 3600 C18 Series 32GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 30
读取速度，GB/s

16.1 18.5
写入速度，GB/s

10.1 15.1
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2764 3609

RAM Latency Calculator

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最新比较

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Crucial Technology BLE4G4D26AFEA.8FBD 4GB

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A-DATA Technology DDR3 1600 4GB

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Kingston ACR16D3LS1KNG/8G 8GB

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Crucial Technology BL16G36C16U4B.M8FB1 16GB

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Kingston KP4T2F-PSB 4GB

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