Samsung 1600 CL10 Series 8GB vs Samsung M378A1G43TB1-CTD 8GB

总分

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

总分

Samsung M378A1G43TB1-CTD 8GB

Samsung M378A1G43TB1-CTD 8GB

差异规格评论

差异

Samsung 1600 CL10 Series 8GB

需要考虑的原因
Samsung 1600 CL10 Series 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 28

左右 11% 更低的延时

Samsung M378A1G43TB1-CTD 8GB

需要考虑的原因
Samsung M378A1G43TB1-CTD 8GB

报告一个错误

更快的读取速度，GB/s

16.6 16.1

测试中的平均数值
更快的写入速度，GB/s

13.7 10.1

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung 1600 CL10 Series 8GB

Samsung M378A1G43TB1-CTD 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 28
读取速度，GB/s

16.1 16.6
写入速度，GB/s

10.1 13.7
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2764 3007

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

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Crucial Technology CT2K102464BD160B 8GB

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Gold Key Technology Co Ltd GKE160SO102408-2933 16GB

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Peak Electronics 256X64M-67E 2GB

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G Skill Intl F4-4000C19-4GVK 4GB

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A-DATA Technology ADOVE1A0834E 1GB

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A-DATA Technology DQKD1A08 1GB

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Samsung M471A1K1KBB0-CPB 8GB

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Corsair CMK16GX4M2D3600C16 8GB

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Corsair CMD16GX4M4B3200C16-R 4GB

Samsung M3 93T5750CZA-CE6 2GB

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Kingston 9905630-018.A00G 8GB

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Kingston 99P5474-014.A00LF 4GB

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Apacer Technology D22.2221ZA.001 8GB

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Dust Leopard DDR4-2400 C17 4GB 4GB

Dust Leopard DDR4-2400 C17 4GB 4GB