Samsung 18ASF1G72PDZ-2G1B1 16GB vs Crucial Technology CT16G4DFD8213.16FDD1 16GB

总分

Samsung 18ASF1G72PDZ-2G1B1 16GB

Samsung 18ASF1G72PDZ-2G1B1 16GB

总分

Crucial Technology CT16G4DFD8213.16FDD1 16GB

Crucial Technology CT16G4DFD8213.16FDD1 16GB

差异规格评论

差异

Samsung 18ASF1G72PDZ-2G1B1 16GB

需要考虑的原因
Samsung 18ASF1G72PDZ-2G1B1 16GB

报告一个错误

低于PassMark测试中的延时，ns

32 76

左右 58% 更低的延时
更快的写入速度，GB/s

8.6 6.4

测试中的平均数值

Crucial Technology CT16G4DFD8213.16FDD1 16GB

需要考虑的原因
Crucial Technology CT16G4DFD8213.16FDD1 16GB

报告一个错误

更快的读取速度，GB/s

13.6 9.8

测试中的平均数值

规格

完整的技术规格清单

Samsung 18ASF1G72PDZ-2G1B1 16GB

Crucial Technology CT16G4DFD8213.16FDD1 16GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

32 76
读取速度，GB/s

9.8 13.6
写入速度，GB/s

8.6 6.4
内存带宽，mbps

17000 17000

Other

描述

PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19
时序/时钟速度

14-14-14, 15-15-15, 16-16-16 / 2133 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2271 1624

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Atla Electronics Co. Ltd. AD4SST8GT1WB-FQGE 8GB