Samsung DDR3 8GB 1600MHz 8GB vs Micron Technology 16ATF1G64AZ-2G1A1 8GB

总分

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

总分

Micron Technology 16ATF1G64AZ-2G1A1 8GB

Micron Technology 16ATF1G64AZ-2G1A1 8GB

差异规格评论

差异

Samsung DDR3 8GB 1600MHz 8GB

需要考虑的原因
Samsung DDR3 8GB 1600MHz 8GB

报告一个错误

更快的读取速度，GB/s

14.9 12.7

测试中的平均数值

Micron Technology 16ATF1G64AZ-2G1A1 8GB

需要考虑的原因
Micron Technology 16ATF1G64AZ-2G1A1 8GB

报告一个错误

低于PassMark测试中的延时，ns

42 43

左右 -2% 更低的延时
更快的写入速度，GB/s

10.2 9.6

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung DDR3 8GB 1600MHz 8GB

Micron Technology 16ATF1G64AZ-2G1A1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 42
读取速度，GB/s

14.9 12.7
写入速度，GB/s

9.6 10.2
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2506 2701

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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Crucial Technology CT4G4DFS8213.C8FAR2 4GB

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G Skill Intl F4-2666C19-8GVR 8GB

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Apacer Technology 78.B1GET.AU00C 4GB

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Crucial Technology BL8G32C16U4BL.8FE 8GB

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G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

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Crucial Technology CT16G4SFD8266.16FE1 16GB

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Kingston 99U5595-005.A00LF 2GB

A-DATA Technology AO2P24HC8T1-BTBS 8GB

A-DATA Technology AO2P24HC8T1-BTBS 8GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

G Skill Intl F4-3200C16-8GVKBN 8GB

G Skill Intl F4-3200C16-8GVKBN 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Kingston 9905630-052.A00G 16GB

Kingston 9905630-052.A00G 16GB

Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

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G Skill Intl F4-3600C18-32GTZR 32GB

Kingston 99U5584-004.A00LF 4GB

Kingston 99U5584-004.A00LF 4GB

Corsair CM4X16GC3200C16K4 16GB

Corsair CM4X16GC3200C16K4 16GB