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Samsung M3 78T2863EHS-CF7 1GB
Crucial Technology BLS4G4D240FSC.8FARG 4GB
比较
Samsung M3 78T2863EHS-CF7 1GB vs Crucial Technology BLS4G4D240FSC.8FARG 4GB
总分
Samsung M3 78T2863EHS-CF7 1GB
总分
Crucial Technology BLS4G4D240FSC.8FARG 4GB
差异
规格
评论
差异
需要考虑的原因
Samsung M3 78T2863EHS-CF7 1GB
报告一个错误
更快的读取速度,GB/s
4
18
测试中的平均数值
更快的写入速度,GB/s
2,123.3
13.2
测试中的平均数值
需要考虑的原因
Crucial Technology BLS4G4D240FSC.8FARG 4GB
报告一个错误
低于PassMark测试中的延时,ns
27
59
左右 -119% 更低的延时
更高的内存带宽,mbps
19200
6400
左右 3 更高的带宽
规格
完整的技术规格清单
Samsung M3 78T2863EHS-CF7 1GB
Crucial Technology BLS4G4D240FSC.8FARG 4GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
59
27
读取速度,GB/s
4,833.8
18.0
写入速度,GB/s
2,123.3
13.2
内存带宽,mbps
6400
19200
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
731
2960
Samsung M3 78T2863EHS-CF7 1GB RAM的比较
Samsung M3 78T2863QZS-CE6 1GB
Crucial Technology BLS8G4D240FSE.M16FAD 8GB
Crucial Technology BLS4G4D240FSC.8FARG 4GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M3 78T2863EHS-CF7 1GB
Crucial Technology BLS4G4D240FSC.8FARG 4GB
Kingston 99U5584-005.A00LF 4GB
Kingston 9905598-040.A00G 16GB
G Skill Intl F3-10600CL9-2GBNT 2GB
SanMax Technologies Inc. SMD4-U8G46ME-32AA 8GB
A-DATA Technology AD73I1B1672EG 2GB
Samsung M471A2K43CB1-CRCR 16GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
Kingston 9905744-011.A00G 32GB
Crucial Technology CT51264BD160B.C16F 4GB
Wilk Elektronik S.A. GR2400S464L17S/8G 8GB
Crucial Technology BLT2G3D1608DT1TX0 2GB
Corsair CMSX32GX4M2A2933C19 16GB
Corsair CM2X1024-6400C4 1GB
Corsair CMK16GX4M4C3200C15 4GB
Crucial Technology CT102464BA160B.M16 8GB
Micron Technology 18ASF1G72PZ-2G3B1 8GB
Micron Technology 16JTF25664AZ-1G4F1 2GB
Kingston KHX2400C15S4/4G 4GB
A-DATA Technology DDR2 800G 2GB
Crucial Technology BLE8G4D26AFEA.16FBD 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Apacer Technology 78.B1GN3.4032B 4GB
Kingston ACR256X64D3S1333C9 2GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6CJR8N
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C
G Skill Intl F4-3600C19-16GSXW 16GB
报告一个错误
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Bug description
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