Samsung M3 78T2863EHS-CF7 1GB vs Gold Key Technology Co Ltd NMUD416F82-3200D 16GB

总分

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

总分

Gold Key Technology Co Ltd NMUD416F82-3200D 16GB

Gold Key Technology Co Ltd NMUD416F82-3200D 16GB

差异规格评论

差异

Samsung M3 78T2863EHS-CF7 1GB

需要考虑的原因
Samsung M3 78T2863EHS-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 14.5

测试中的平均数值
更快的写入速度，GB/s

2,123.3 13.0

测试中的平均数值

Gold Key Technology Co Ltd NMUD416F82-3200D 16GB

需要考虑的原因
Gold Key Technology Co Ltd NMUD416F82-3200D 16GB

报告一个错误

低于PassMark测试中的延时，ns

25 59

左右 -136% 更低的延时
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2863EHS-CF7 1GB

Gold Key Technology Co Ltd NMUD416F82-3200D 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

59 25
读取速度，GB/s

4,833.8 14.5
写入速度，GB/s

2,123.3 13.0
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

731 3377

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMU32GX4M4C3200C16 8GB

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Samsung M471B5273DH0-CK0 4GB

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Nanya Technology NT2GC64B88B0NS-CG 2GB

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Avant Technology W6451U66J5213ND 4GB

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Patriot Memory (PDP Systems) PSD38G16002S 8GB

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Kingston 99U5474-010.A00LF 2GB

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SK Hynix HMA81GU6MFR8N-UH 8GB

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Crucial Technology BLT16G4D30AETA.K16FB 16GB

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A-DATA Technology AE4S240038G17-BHYA 8GB

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SK Hynix HMT31GR7CFR4C-PB 8GB

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Corsair CMW16GX4M2D3600C16 8GB

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Samsung M391B5673EH1-CH9 2GB

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Samsung M474A1G43EB1-CRC 8GB

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