Samsung M3 78T2863EHS-CF7 1GB vs Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB

总分

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

总分

Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB

Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB

差异规格评论

差异

Samsung M3 78T2863EHS-CF7 1GB

需要考虑的原因
Samsung M3 78T2863EHS-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 15.6

测试中的平均数值
更快的写入速度，GB/s

2,123.3 12.1

测试中的平均数值

Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB

需要考虑的原因
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB

报告一个错误

低于PassMark测试中的延时，ns

24 59

左右 -146% 更低的延时
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2863EHS-CF7 1GB

Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

59 24
读取速度，GB/s

4,833.8 15.6
写入速度，GB/s

2,123.3 12.1
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

731 2852

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB

Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16

Unifosa Corporation HU564404EP0200 4GB

Unifosa Corporation HU564404EP0200 4GB

Crucial Technology BL16G30C15U4WL.M16FE 16GB

Crucial Technology BL16G30C15U4WL.M16FE 16GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

Corsair CMD16GX4M2B3466C16 8GB

Corsair CMD16GX4M2B3466C16 8GB

Kingston KF552C40-16 16GB

Kingston KF552C40-16 16GB

Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB

Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Crucial Technology CT16G4SFRA32A.C16FP 16GB

Crucial Technology CT16G4SFRA32A.C16FP 16GB

Crucial Technology CT51264AC800.C16FC 4GB

Crucial Technology CT51264AC800.C16FC 4GB

Transcend Information TS1GSH64V1H 8GB

Transcend Information TS1GSH64V1H 8GB

Nanya Technology M2F2G64CB88B7N-CG 2GB

Nanya Technology M2F2G64CB88B7N-CG 2GB

Corsair CMV8GX4M1A2133C15 8GB

Corsair CMV8GX4M1A2133C15 8GB

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

Corsair CMU32GX4M2D3200C16 16GB

Corsair CMU32GX4M2D3200C16 16GB

Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

Hewlett-Packard 7EH67AA# 8GB

Hewlett-Packard 7EH67AA# 8GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology BL8G36C16U4WL.M8FE1 8GB

Crucial Technology BL8G36C16U4WL.M8FE1 8GB

Kingston HX318C10FK/4 4GB

Kingston HX318C10FK/4 4GB

Corsair CMW32GX4M4K4266C19 8GB

Corsair CMW32GX4M4K4266C19 8GB

Ramaxel Technology RMR5030ME68F9F1600 4GB

Ramaxel Technology RMR5030ME68F9F1600 4GB

Micron Technology 16ATF2G64HZ-2G3A1 16GB

Micron Technology 16ATF2G64HZ-2G3A1 16GB

Crucial Technology CT51264AC800.C16FC 4GB

Crucial Technology CT51264AC800.C16FC 4GB

Crucial Technology CT8G4DFS8213.C8FDR1 8GB

Crucial Technology CT8G4DFS8213.C8FDR1 8GB

Kingston 9905403-156.A00LF 2GB

Kingston 9905403-156.A00LF 2GB

Kingston KMKYF9-MIB 8GB

Kingston KMKYF9-MIB 8GB