Samsung M3 78T2863QZS-CF7 1GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TF 4GB

Samsung M3 78T2863QZS-CF7 1GB vs Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TF 4GB

总分

Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

总分

Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TF 4GB

差异规格评论

差异

Samsung M3 78T2863QZS-CF7 1GB

需要考虑的原因
Samsung M3 78T2863QZS-CF7 1GB

报告一个错误

Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TF 4GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TF 4GB

报告一个错误

低于PassMark测试中的延时，ns

37 69

左右 -86% 更低的延时
更快的读取速度，GB/s

9.5 4

测试中的平均数值
更快的写入速度，GB/s

7.7 1,857.7

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2863QZS-CF7 1GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TF 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

69 37
读取速度，GB/s

4,217.2 9.5
写入速度，GB/s

1,857.7 7.7
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

668 1949

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Kingston KVR800D2N6/2G 2GB

Kingston KVR800D2N6/2G 2GB

Corsair CMR32GX4M4A2666C16 8GB

Corsair CMR32GX4M4A2666C16 8GB

Kingston 9905403-437.A01LF 4GB

Kingston 9905403-437.A01LF 4GB

Kingston 9905630-033.A00G 16GB

Kingston 9905630-033.A00G 16GB

Kingston 9905471-002.A00LF 2GB

Kingston 9905471-002.A00LF 2GB

Samsung M471A2K43BB1-CRC 16GB

Samsung M471A2K43BB1-CRC 16GB

Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N

Corsair CMD16GX3M2A1866C9 8GB

Corsair CMD16GX3M2A1866C9 8GB

A-DATA Technology AO2P21FC4R1-BRFS 4GB

A-DATA Technology AO2P21FC4R1-BRFS 4GB

SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

SK Hynix Kingston 4GB

SK Hynix Kingston 4GB

Kingston 99U5429-007.A00LF 2GB

Kingston 99U5429-007.A00LF 2GB

Kingston 99U5702-094.A00G 8GB

Kingston 99U5702-094.A00G 8GB

Team Group Inc. UD5-6400 16GB

Team Group Inc. UD5-6400 16GB

Samsung M393A2G40DB1-CRC 16GB

Samsung M393A2G40DB1-CRC 16GB

Corsair CMX4GX3M1A1333C9 4GB

Corsair CMX4GX3M1A1333C9 4GB

Crucial Technology CT16G4SFD8266.M16FRS 16GB

Crucial Technology CT16G4SFD8266.M16FRS 16GB

Kingston 99U5584-010.A00LF 4GB

Kingston 99U5584-010.A00LF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-UH 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

SK Hynix HMA82GS6CJR8N-VK 16GB

SK Hynix HMA82GS6CJR8N-VK 16GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

Avexir Technologies Corporation DDR4-3600 CL17 8GB 8GB

Avexir Technologies Corporation DDR4-3600 CL17 8GB 8GB

Nanya Technology NT256T64UH4B0FY-37 256MB

Nanya Technology NT256T64UH4B0FY-37 256MB

Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB

Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16

G Skill Intl F3-1333C9-4GIS 4GB

G Skill Intl F3-1333C9-4GIS 4GB

Crucial Technology BLS8G4S26BFSDK.8FBD 8GB

Crucial Technology BLS8G4S26BFSDK.8FBD 8GB