Samsung M3 78T2863QZS-CF7 1GB vs takeMS International AG TMS2GB264D081-805G 2GB

总分

Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

总分

takeMS International AG TMS2GB264D081-805G 2GB

takeMS International AG TMS2GB264D081-805G 2GB

差异规格评论

差异

Samsung M3 78T2863QZS-CF7 1GB

需要考虑的原因
Samsung M3 78T2863QZS-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 3

测试中的平均数值

takeMS International AG TMS2GB264D081-805G 2GB

需要考虑的原因
takeMS International AG TMS2GB264D081-805G 2GB

报告一个错误

低于PassMark测试中的延时，ns

57 69

左右 -21% 更低的延时
更快的写入速度，GB/s

2,383.4 1,857.7

测试中的平均数值

规格

完整的技术规格清单

Samsung M3 78T2863QZS-CF7 1GB

takeMS International AG TMS2GB264D081-805G 2GB

主要特点

存储器类型

DDR2 DDR2
PassMark中的延时，ns

69 57
读取速度，GB/s

4,217.2 3,759.3
写入速度，GB/s

1,857.7 2,383.4
内存带宽，mbps

6400 6400

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC2-6400, SSTL 1.8V, CAS Supported: 4 5
时序/时钟速度

5-5-5-15 / 800 MHz 5-5-5-15 / 800 MHz
排名PassMark (越多越好)

668 715

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 8ATF1G64AZ-2G6E1 8GB

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Kingston KVR16N11/8-SP 8GB

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EVGA 8GX-D4-3200-MR 8GB

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UMAX Technology D4-3200-16G-1024X8-L 16GB

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Smart Modular SH564128FH8NZQNSCG 4GB

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Galaxy Microsystems Ltd. GALAX GOC 2016 8GB

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A-DATA Technology ADOVE1A0834E 1GB

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G Skill Intl F4-3200C15-16GTZKY 16GB

Kingston 9905402-665.A00LF 4GB

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Kingston KHX2800C14D4/4GX 4GB

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Kingston SNY1600S11-4G-EDEG 4GB

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Corsair VS1GB800D2 1GB

Corsair VS1GB800D2 1GB

Corsair CMK64GX4M2C3200C16 32GB

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