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Samsung M3 78T2953EZ3-CF7 1GB
Crucial Technology BLS16G4S240FSD.16FBD 16GB

Samsung M3 78T2953EZ3-CF7 1GB vs Crucial Technology BLS16G4S240FSD.16FBD 16GB

总分
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Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

总分
star star star star star
Crucial Technology BLS16G4S240FSD.16FBD 16GB

Crucial Technology BLS16G4S240FSD.16FBD 16GB

差异 规格 评论

差异

Samsung M3 78T2953EZ3-CF7 1GB 需要考虑的原因
Samsung M3 78T2953EZ3-CF7 1GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 14.3
    测试中的平均数值
Crucial Technology BLS16G4S240FSD.16FBD 16GB 需要考虑的原因
Crucial Technology BLS16G4S240FSD.16FBD 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    38 left arrow 58
    左右 -53% 更低的延时
  • 更快的写入速度，GB/s
    10.9 left arrow 1,950.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T2953EZ3-CF7 1GB
Crucial Technology BLS16G4S240FSD.16FBD 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    58 left arrow 38
  • 读取速度，GB/s
    4,241.0 left arrow 14.3
  • 写入速度，GB/s
    1,950.7 left arrow 10.9
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    651 left arrow 2638

Samsung M3 78T2953EZ3-CF7 1GB RAM的比较

Corsair VS1GB800D2 1GB
Kingston KVR800D2N6/2G 2GB

Crucial Technology BLS16G4S240FSD.16FBD 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2

最新比较

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
G Skill Intl F4-3466C16-16GTZ 16GB
G Skill Intl F4-3466C16-16GTZ 16GB
内存RAM
Samsung M3 78T2953EZ3-CF7 1GB
Samsung M3 78T2953EZ3-CF7 1GB
Crucial Technology BLS16G4S240FSD.16FBD 16GB
Crucial Technology BLS16G4S240FSD.16FBD 16GB
内存RAM
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F4-3200C14-16GTZKY 16GB
G Skill Intl F4-3200C14-16GTZKY 16GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston 9905702-204.A00G 8GB
Kingston 9905702-204.A00G 8GB
内存RAM
Samsung M378B5173EB0-CK0 4GB
Samsung M378B5173EB0-CK0 4GB
Kingston KHX3200C18D4/16G 16GB
Kingston KHX3200C18D4/16G 16GB
内存RAM
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
SK Hynix HMA82GU6MFR8N-TF 16GB
SK Hynix HMA82GU6MFR8N-TF 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
SK Hynix HMA851U6CJR6N-VK 4GB
SK Hynix HMA851U6CJR6N-VK 4GB
内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology BLS16G4D26BFSC.16FD 16GB
Crucial Technology BLS16G4D26BFSC.16FD 16GB
内存RAM
Elpida EBJ41UF8BDU5-GN-F 4GB
Elpida EBJ41UF8BDU5-GN-F 4GB
SK Hynix HMA81GU6DJR8N-XN 8GB
SK Hynix HMA81GU6DJR8N-XN 8GB
内存RAM
SK Hynix HMT41GU7BFR8A-PB 8GB
SK Hynix HMT41GU7BFR8A-PB 8GB
Crucial Technology CT16G4SFD8266.C16FE 16GB
Crucial Technology CT16G4SFD8266.C16FE 16GB
内存RAM
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
Crucial Technology CT8G4SFD824A.M16FB 8GB
Crucial Technology CT8G4SFD824A.M16FB 8GB
内存RAM
Kingston 9965525-155.A00LF 8GB
Kingston 9965525-155.A00LF 8GB
Crucial Technology CT8G4DFS824A.C8FDD1 8GB
Crucial Technology CT8G4DFS824A.C8FDD1 8GB
内存RAM
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
Transcend Information JM2666HLB-8G 8GB
Transcend Information JM2666HLB-8G 8GB
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