Samsung M3 78T2953EZ3-CF7 1GB vs Crucial Technology CT16G4SFS832A.C8FE 16GB

总分

Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

总分

Crucial Technology CT16G4SFS832A.C8FE 16GB

Crucial Technology CT16G4SFS832A.C8FE 16GB

差异规格评论

差异

Samsung M3 78T2953EZ3-CF7 1GB

需要考虑的原因
Samsung M3 78T2953EZ3-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 17

测试中的平均数值

Crucial Technology CT16G4SFS832A.C8FE 16GB

需要考虑的原因
Crucial Technology CT16G4SFS832A.C8FE 16GB

报告一个错误

低于PassMark测试中的延时，ns

40 58

左右 -45% 更低的延时
更快的写入速度，GB/s

13.7 1,950.7

测试中的平均数值
更高的内存带宽，mbps

25600 6400

左右 4 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2953EZ3-CF7 1GB

Crucial Technology CT16G4SFS832A.C8FE 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

58 40
读取速度，GB/s

4,241.0 17.0
写入速度，GB/s

1,950.7 13.7
内存带宽，mbps

6400 25600

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
时序/时钟速度

5-5-5-15 / 800 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

651 3180

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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最新比较

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Kingston 99U5584-004.A00LF 4GB

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Corsair CMK8GX4M2B4200C19 4GB

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Crucial Technology BLE4G3D1608DE1TX0. 4GB

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KingSpec KingSpec 16GB

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PNY Electronics PNY 2GB

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Kingston 99U5469-046.A00LF 4GB

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Kingston KYXC0V-MIH 16GB

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Shenzhen Xingmem Technology Corp M378A1K43BB1-CPB 8GB

Shenzhen Xingmem Technology Corp M378A1K43BB1-CPB 8GB

Samsung M471B5273CH0-CH9 4GB

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Heoriady M378A1K43BB2-CTD 8GB

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Corsair CMW64GX4M4Z2933C16 16GB

Corsair CMW64GX4M4Z2933C16 16GB

G Skill Intl F3-2400C11-8GSR 8GB

G Skill Intl F3-2400C11-8GSR 8GB

SK Hynix HMA851S6DJR6N-XN 4GB

SK Hynix HMA851S6DJR6N-XN 4GB

Crucial Technology CT102464BF160B-16F 8GB

Crucial Technology CT102464BF160B-16F 8GB

Crucial Technology CT8G4SFRA32A.M8FJ 8GB

Crucial Technology CT8G4SFRA32A.M8FJ 8GB

Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

Corsair CMSX16GX4M2A3000C18 8GB

Corsair CMSX16GX4M2A3000C18 8GB