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Samsung M3 78T2953EZ3-CF7 1GB
G Skill Intl F4-3200C16-4GTZB 4GB

Samsung M3 78T2953EZ3-CF7 1GB vs G Skill Intl F4-3200C16-4GTZB 4GB

总分
star star star star star
Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

总分
star star star star star
G Skill Intl F4-3200C16-4GTZB 4GB

G Skill Intl F4-3200C16-4GTZB 4GB

差异 规格 评论

差异

Samsung M3 78T2953EZ3-CF7 1GB 需要考虑的原因
Samsung M3 78T2953EZ3-CF7 1GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 17.1
    测试中的平均数值
G Skill Intl F4-3200C16-4GTZB 4GB 需要考虑的原因
G Skill Intl F4-3200C16-4GTZB 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 58
    左右 -93% 更低的延时
  • 更快的写入速度，GB/s
    13.0 left arrow 1,950.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T2953EZ3-CF7 1GB
G Skill Intl F4-3200C16-4GTZB 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    58 left arrow 30
  • 读取速度，GB/s
    4,241.0 left arrow 17.1
  • 写入速度，GB/s
    1,950.7 left arrow 13.0
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    651 left arrow 3014

Samsung M3 78T2953EZ3-CF7 1GB RAM的比较

Corsair VS1GB800D2 1GB
Kingston KVR800D2N6/2G 2GB

G Skill Intl F4-3200C16-4GTZB 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

G Skill Intl F5-5600J4040C16G 16GB
G Skill Intl F5-5600J4040C16G 16GB
G Skill Intl F4-3600C16-32GTZR 32GB
G Skill Intl F4-3600C16-32GTZR 32GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Corsair CMD32GX4M4C3200C14C 8GB
Corsair CMD32GX4M4C3200C14C 8GB
内存RAM
Kingston 9905403-011.A03LF 2GB
Kingston 9905403-011.A03LF 2GB
Gloway International (HK) STK2133C15-8GB 8GB
Gloway International (HK) STK2133C15-8GB 8GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
V-Color Technology Inc. TN48G24S817-VHA/R 8GB
V-Color Technology Inc. TN48G24S817-VHA/R 8GB
内存RAM
Patriot Memory (PDP Systems) PSD22G8002 2GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Corsair CM4X16GF3200C22S2 16GB
Corsair CM4X16GF3200C22S2 16GB
内存RAM
Patriot Memory (PDP Systems) 4000 C19 Series 8GB
Patriot Memory (PDP Systems) 4000 C19 Series 8GB
Kingston 8ATF1G64AZ-2G3A1 8GB
Kingston 8ATF1G64AZ-2G3A1 8GB
内存RAM
Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
Crucial Technology CT8G4DFS8213.C8FAD1 8GB
Crucial Technology CT8G4DFS8213.C8FAD1 8GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Corsair CMK64GX4M4C3000C16 16GB
Corsair CMK64GX4M4C3000C16 16GB
内存RAM
Kingston 9965525-018.A00LF 4GB
Kingston 9965525-018.A00LF 4GB
Kingston 9905630-030.A00G 16GB
Kingston 9905630-030.A00G 16GB
内存RAM
Samsung M471A1K43CB1-CTD 8GB
Samsung M471A1K43CB1-CTD 8GB
Crucial Technology CT16G4SFRA32A.C8FE 16GB
Crucial Technology CT16G4SFRA32A.C8FE 16GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
Kingston 9905700-047.A00G 16GB
Kingston 9905700-047.A00G 16GB
内存RAM
Kingmax Semiconductor FLFE85F-C8KM9 2GB
Kingmax Semiconductor FLFE85F-C8KM9 2GB
Team Group Inc. TEAMGROUP-UD4-3866 8GB
Team Group Inc. TEAMGROUP-UD4-3866 8GB
内存RAM
Samsung M393B5170FH0-CK0 4GB
Samsung M393B5170FH0-CK0 4GB
Kingston 9965640-001.C00G 16GB
Kingston 9965640-001.C00G 16GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
Ramsta Ramsta-2400Mhz-8G 8GB
Ramsta Ramsta-2400Mhz-8G 8GB
内存RAM