Samsung M3 78T5663RZ3-CE6 2GB vs Kingston 9905702-184.A00G 8GB

总分

Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

总分

Kingston 9905702-184.A00G 8GB

Kingston 9905702-184.A00G 8GB

差异规格评论

差异

Samsung M3 78T5663RZ3-CE6 2GB

需要考虑的原因
Samsung M3 78T5663RZ3-CE6 2GB

报告一个错误

更快的读取速度，GB/s

4 18.4

测试中的平均数值
更快的写入速度，GB/s

2,168.2 15.8

测试中的平均数值

Kingston 9905702-184.A00G 8GB

需要考虑的原因
Kingston 9905702-184.A00G 8GB

报告一个错误

低于PassMark测试中的延时，ns

22 60

左右 -173% 更低的延时
更高的内存带宽，mbps

23400 5300

左右 4.42 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T5663RZ3-CE6 2GB

Kingston 9905702-184.A00G 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

60 22
读取速度，GB/s

4,595.2 18.4
写入速度，GB/s

2,168.2 15.8
内存带宽，mbps

5300 23400

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-23400, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22
时序/时钟速度

5-5-5-15 / 667 MHz 19-19-19, 20-20-20, 21-21-21, 22-22-22 / 2933 MHz
排名PassMark (越多越好)

941 3512

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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