Samsung M3 78T2953EZ3-CF7 1GB vs Kingston XW21KG-MIE2 8GB

总分

Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

总分

Kingston XW21KG-MIE2 8GB

Kingston XW21KG-MIE2 8GB

差异规格评论

差异

Samsung M3 78T2953EZ3-CF7 1GB

需要考虑的原因
Samsung M3 78T2953EZ3-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 16.9

测试中的平均数值

Kingston XW21KG-MIE2 8GB

需要考虑的原因
Kingston XW21KG-MIE2 8GB

报告一个错误

低于PassMark测试中的延时，ns

33 58

左右 -76% 更低的延时
更快的写入速度，GB/s

13.5 1,950.7

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2953EZ3-CF7 1GB

Kingston XW21KG-MIE2 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

58 33
读取速度，GB/s

4,241.0 16.9
写入速度，GB/s

1,950.7 13.5
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

651 3141

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMK32GX4M2L3200C16 16GB

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G Skill Intl F3-14900CL8-4GBXM 4GB

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G Skill Intl F4-3200C16-32GVK 32GB

G Skill Intl F4-3200C16-32GVK 32GB

Corsair CMZ16GX3M2A2400C10 8GB

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Essencore Limited KD4AGSA8A-32N2200 16GB

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Samsung M378B5673EH1-CF8 2GB

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G Skill Intl F4-3600C17-16GTZ 16GB

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Kingston MSI32D4S2S1ME-8 8GB

Kingston 9905403-174.A00LF 2GB

Kingston 9905403-174.A00LF 2GB

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Kingston XW21KG-MIE2 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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Kingston 9965589-043.E00G 16GB

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Qimonda 64T128020EDL2.5C2 1GB

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Apacer Technology 76.D305G.D390B 16GB

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SK Hynix HMT351R7EFR8C-RD 4GB

Micron Technology 72ASS4G72LZ-2G3A2 32GB

Micron Technology 72ASS4G72LZ-2G3A2 32GB

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Kingston 9905403-437.A01LF 4GB

Crucial Technology BLS8G4D240FSE.16FAR 8GB

Crucial Technology BLS8G4D240FSE.16FAR 8GB