Samsung M3 78T2953EZ3-CF7 1GB vs Micron Technology 4ATF51264AZ-2G3B1 4GB

总分

Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

总分

Micron Technology 4ATF51264AZ-2G3B1 4GB

Micron Technology 4ATF51264AZ-2G3B1 4GB

差异规格评论

差异

Samsung M3 78T2953EZ3-CF7 1GB

需要考虑的原因
Samsung M3 78T2953EZ3-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 15.6

测试中的平均数值

Micron Technology 4ATF51264AZ-2G3B1 4GB

需要考虑的原因
Micron Technology 4ATF51264AZ-2G3B1 4GB

报告一个错误

低于PassMark测试中的延时，ns

34 58

左右 -71% 更低的延时
更快的写入速度，GB/s

11.2 1,950.7

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2953EZ3-CF7 1GB

Micron Technology 4ATF51264AZ-2G3B1 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

58 34
读取速度，GB/s

4,241.0 15.6
写入速度，GB/s

1,950.7 11.2
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

651 2468

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Kingston 99U5700-014.A00G 8GB

Kingston 99U5700-014.A00G 8GB

Samsung M471B5773DH0-CH9 2GB

Samsung M471B5773DH0-CH9 2GB

G Skill Intl F4-3600C14-16GTZR 16GB

G Skill Intl F4-3600C14-16GTZR 16GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Corsair CM4X16GE2400Z16K4 16GB

Corsair CM4X16GE2400Z16K4 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Apacer Technology AQD-D4U8GN24-SE 8GB

Apacer Technology AQD-D4U8GN24-SE 8GB

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

Carry Technology Co. Ltd. 4DCC3IOGE-MATP 8GB

Carry Technology Co. Ltd. 4DCC3IOGE-MATP 8GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

G Skill Intl F4-3400C16-8GTZSW 8GB

G Skill Intl F4-3400C16-8GTZSW 8GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

Kingston 9905711-032.A00G 8GB

Kingston 9905711-032.A00G 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Crucial Technology BLS16G4D26BFST.16FD 16GB

Crucial Technology BLS16G4D26BFST.16FD 16GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Hoodisk Electronics Co Ltd NMUD480E8x-2666 8GB

Hoodisk Electronics Co Ltd NMUD480E8x-2666 8GB

Crucial Technology CT25664AA800.M16FM 2GB

Crucial Technology CT25664AA800.M16FM 2GB

Kingston 9905678-029.A00G 8GB

Kingston 9905678-029.A00G 8GB

Kingston 99U5474-028.A00LF 4GB

Kingston 99U5474-028.A00LF 4GB

G Skill Intl F4-3600C14-8GTRGB 8GB

G Skill Intl F4-3600C14-8GTRGB 8GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Kingston HP26D4U6D8ME-16X 16GB

Kingston HP26D4U6D8ME-16X 16GB

Corsair CMX8GX3M2A1600C11 4GB

Corsair CMX8GX3M2A1600C11 4GB

Wilk Elektronik S.A. GR3200D464L22S/16G 16GB

Wilk Elektronik S.A. GR3200D464L22S/16G 16GB

SK Hynix HMA82GS6CJR8N-VK 16GB

SK Hynix HMA82GS6CJR8N-VK 16GB

Ramaxel Technology RMSA3310MJ86H9F-3200 4GB

Ramaxel Technology RMSA3310MJ86H9F-3200 4GB