Samsung M3 78T2953EZ3-CF7 1GB vs Micron Technology MTA8ATF1G64HZ-2G3B1 16GB

总分

Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

总分

Micron Technology MTA8ATF1G64HZ-2G3B1 16GB

Micron Technology MTA8ATF1G64HZ-2G3B1 16GB

差异规格评论

差异

Samsung M3 78T2953EZ3-CF7 1GB

需要考虑的原因
Samsung M3 78T2953EZ3-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 12.2

测试中的平均数值

Micron Technology MTA8ATF1G64HZ-2G3B1 16GB

需要考虑的原因
Micron Technology MTA8ATF1G64HZ-2G3B1 16GB

报告一个错误

低于PassMark测试中的延时，ns

28 58

左右 -107% 更低的延时
更快的写入速度，GB/s

9.3 1,950.7

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2953EZ3-CF7 1GB

Micron Technology MTA8ATF1G64HZ-2G3B1 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

58 28
读取速度，GB/s

4,241.0 12.2
写入速度，GB/s

1,950.7 9.3
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

651 2382

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Corsair CMX4GX3M2A1600C9 2GB

Corsair CMX4GX3M2A1600C9 2GB

G Skill Intl F4-3000C16-8GSXFB 8GB

G Skill Intl F4-3000C16-8GSXFB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A

Samsung M471A2K43BB1-CRC 16GB

Samsung M471A2K43BB1-CRC 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

G Skill Intl F4-3600C17-8GTZR 8GB

G Skill Intl F4-3600C17-8GTZR 8GB

SK Hynix HMT41GS6BFR8A-PB 8GB

SK Hynix HMT41GS6BFR8A-PB 8GB

Kingston ACR26D4S9S8ME-8 8GB

Kingston ACR26D4S9S8ME-8 8GB

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

Gold Key Technology Co Ltd NMUD480E82-3000D 8GB

Gold Key Technology Co Ltd NMUD480E82-3000D 8GB

Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

Essencore Limited KD48GS88C-32N2200 8GB

Essencore Limited KD48GS88C-32N2200 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Crucial Technology BLS4G4D240FSE.8FAR 4GB

Crucial Technology BLS4G4D240FSE.8FAR 4GB

Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

Micron Technology MTA8ATF1G64HZ-2G3B1 16GB

Micron Technology MTA8ATF1G64HZ-2G3B1 16GB

Kingston 9965516-430.A00G 16GB

Kingston 9965516-430.A00G 16GB

Micron Technology 18ASF2G72PDZ-2G3D1 16GB

Micron Technology 18ASF2G72PDZ-2G3D1 16GB

SK Hynix HYMP164U64CP6-Y5 512MB

SK Hynix HYMP164U64CP6-Y5 512MB

Kingston 9905744-076.A00G 16GB

Kingston 9905744-076.A00G 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Corsair CMW32GX4M2Z3200C16 16GB

Corsair CMW32GX4M2Z3200C16 16GB

Apacer Technology 78.01G86.9H50C 1GB

Apacer Technology 78.01G86.9H50C 1GB

Kingston XJ69DF-HYA 8GB

Kingston XJ69DF-HYA 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Corsair CMW32GX4M2D3000C16 16GB

Corsair CMW32GX4M2D3000C16 16GB

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

Crucial Technology CT16G4DFD824A.C16FE 16GB

Crucial Technology CT16G4DFD824A.C16FE 16GB