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Samsung M3 78T2953EZ3-CF7 1GB
Transcend Information TS2GSH64V6B 16GB

Samsung M3 78T2953EZ3-CF7 1GB vs Transcend Information TS2GSH64V6B 16GB

总分
star star star star star
Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

总分
star star star star star
Transcend Information TS2GSH64V6B 16GB

Transcend Information TS2GSH64V6B 16GB

差异 规格 评论

差异

Samsung M3 78T2953EZ3-CF7 1GB 需要考虑的原因
Samsung M3 78T2953EZ3-CF7 1GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 16.4
    测试中的平均数值
Transcend Information TS2GSH64V6B 16GB 需要考虑的原因
Transcend Information TS2GSH64V6B 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 58
    左右 -152% 更低的延时
  • 更快的写入速度，GB/s
    14.4 left arrow 1,950.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 6400
    左右 3.33 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T2953EZ3-CF7 1GB
Transcend Information TS2GSH64V6B 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    58 left arrow 23
  • 读取速度，GB/s
    4,241.0 left arrow 16.4
  • 写入速度，GB/s
    1,950.7 left arrow 14.4
  • 内存带宽，mbps
    6400 left arrow 21300
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    651 left arrow 2978

Samsung M3 78T2953EZ3-CF7 1GB RAM的比较

Corsair VS1GB800D2 1GB
Kingston KVR800D2N6/2G 2GB

Transcend Information TS2GSH64V6B 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M378B5173BH0-CH9 4GB
Samsung M378B5173BH0-CH9 4GB
Corsair CMSX32GX4M2A3200C22 16GB
Corsair CMSX32GX4M2A3200C22 16GB
内存RAM
Kingston 9905316-106.A02LF 1GB
Kingston 9905316-106.A02LF 1GB
Micron Technology 8ATF1G64AZ-2G6H1 8GB
Micron Technology 8ATF1G64AZ-2G6H1 8GB
内存RAM
Samsung M3 78T2953EZ3-CF7 1GB
Samsung M3 78T2953EZ3-CF7 1GB
Transcend Information TS2GSH64V6B 16GB
Transcend Information TS2GSH64V6B 16GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Kingston X75V1H-MIE 32GB
Kingston X75V1H-MIE 32GB
内存RAM
Kingston 99U5471-020.A00LF 4GB
Kingston 99U5471-020.A00LF 4GB
Crucial Technology CT8G4DFD824A.M16FE 8GB
Crucial Technology CT8G4DFD824A.M16FE 8GB
内存RAM
Samsung M393B5170FH0-CH9 4GB
Samsung M393B5170FH0-CH9 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-UH 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N
内存RAM
A-DATA Technology AM2U16BC4P2-B05B 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Crucial Technology BLS8G4D240FSA.16FAD 8GB
Crucial Technology BLS8G4D240FSA.16FAD 8GB
内存RAM
Kingston MSI16D3LS1MNG/8G 8GB
Kingston MSI16D3LS1MNG/8G 8GB
G Skill Intl F4-3600C16-16GTZN 16GB
G Skill Intl F4-3600C16-16GTZN 16GB
内存RAM
Smart Modular SG564568FG8N6KF-Z2 2GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Crucial Technology CT8G4DFRA266.M4FE 8GB
Crucial Technology CT8G4DFRA266.M4FE 8GB
内存RAM
Kingston 9905316-106.A02LF 1GB
Kingston 9905316-106.A02LF 1GB
Eudar Technology Inc. 8GXMP3000CL16 8GB
Eudar Technology Inc. 8GXMP3000CL16 8GB
内存RAM
Ramaxel Technology RMT3160ED58E9W1600 4GB
Ramaxel Technology RMT3160ED58E9W1600 4GB
Kingston 9965600-011.A01G 16GB
Kingston 9965600-011.A01G 16GB
内存RAM
Elpida EBJ17RG4EFWA-DJ-F 16GB
Elpida EBJ17RG4EFWA-DJ-F 16GB
Corsair CMK32GX4M4A2133C15 8GB
Corsair CMK32GX4M4A2133C15 8GB
内存RAM
Kingston 9905403-156.A00LF 2GB
Kingston 9905403-156.A00LF 2GB
Corsair CMK32GX4M4C3000C15 8GB
Corsair CMK32GX4M4C3000C15 8GB
内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Kingston KHX2133C14S4/16G 16GB
Kingston KHX2133C14S4/16G 16GB
内存RAM