Samsung M3 78T3354BZ0-CCC 256MB vs Asgard VMA41UG-MEC1U2AW1 8GB

总分

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

总分

Asgard VMA41UG-MEC1U2AW1 8GB

Asgard VMA41UG-MEC1U2AW1 8GB

差异规格评论

差异

Samsung M3 78T3354BZ0-CCC 256MB

需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB

报告一个错误

低于PassMark测试中的延时，ns

46 71

左右 35% 更低的延时
更快的读取速度，GB/s

2 14.8

测试中的平均数值

Asgard VMA41UG-MEC1U2AW1 8GB

需要考虑的原因
Asgard VMA41UG-MEC1U2AW1 8GB

报告一个错误

更快的写入速度，GB/s

7.7 1,519.2

测试中的平均数值
更高的内存带宽，mbps

19200 3200

左右 6 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T3354BZ0-CCC 256MB

Asgard VMA41UG-MEC1U2AW1 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 71
读取速度，GB/s

2,909.8 14.8
写入速度，GB/s

1,519.2 7.7
内存带宽，mbps

3200 19200

Other

描述

PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

3-3-3-12 / 400 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

241 1866

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BL8G32C16U4B.M8FE1 8GB

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Crucial Technology CT51264AC800.C16FC 4GB

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Crucial Technology BLS8G4D26BFSC.16FBR2 8GB

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Kingston KP4T2F-PSB 4GB

Corsair CMK128GX4M4E3200C16 32GB

Corsair CMK128GX4M4E3200C16 32GB

Kingston 99U5403-036.A00G 4GB

Kingston 99U5403-036.A00G 4GB

G Skill Intl F4-3200C15-16GVR 16GB

G Skill Intl F4-3200C15-16GVR 16GB

G Skill Intl F3-17000CL9-4GBXLD 4GB

G Skill Intl F3-17000CL9-4GBXLD 4GB

Kingston 9905624-044.A00G 8GB

Kingston 9905624-044.A00G 8GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Micron Technology 36ASF2G72PZ-2G3A3 16GB

Micron Technology 36ASF2G72PZ-2G3A3 16GB

Samsung M3 78T5663RZ3-CF7 2GB

Samsung M3 78T5663RZ3-CF7 2GB

Samsung M378A5244CB0-CRC 4GB

Samsung M378A5244CB0-CRC 4GB