Samsung M3 78T3354BZ0-CCC 256MB vs Corsair CMD16GX4M4B3000C14 4GB

总分

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

总分

Corsair CMD16GX4M4B3000C14 4GB

Corsair CMD16GX4M4B3000C14 4GB

差异规格评论

差异

Samsung M3 78T3354BZ0-CCC 256MB

需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB

报告一个错误

更快的读取速度，GB/s

2 15.8

测试中的平均数值

Corsair CMD16GX4M4B3000C14 4GB

需要考虑的原因
Corsair CMD16GX4M4B3000C14 4GB

报告一个错误

低于PassMark测试中的延时，ns

25 46

左右 -84% 更低的延时
更快的写入速度，GB/s

13.1 1,519.2

测试中的平均数值
更高的内存带宽，mbps

17000 3200

左右 5.31 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T3354BZ0-CCC 256MB

Corsair CMD16GX4M4B3000C14 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 25
读取速度，GB/s

2,909.8 15.8
写入速度，GB/s

1,519.2 13.1
内存带宽，mbps

3200 17000

Other

描述

PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

3-3-3-12 / 400 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

241 2991

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HYMP31GF72CMP4D5Y5 8GB

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Unifosa Corporation HU564404EP0200 4GB

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Corsair CMG16GX4M2D3600C18 8GB

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Samsung M3 78T3354BZ0-CCC 256MB

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Kingston 9905678-014.A00G 4GB

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G Skill Intl F4-3200C16-16GTRS 16GB

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Corsair CMX4GX3M1A1333C9 4GB

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Corsair CMSX16GX4M2A3000C18 8GB

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Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

Kingston KHX2400C15/8G 8GB

Kingston KHX2400C15/8G 8GB

SK Hynix HMT451S6AFR8A-PB 4GB

SK Hynix HMT451S6AFR8A-PB 4GB

A-DATA Technology AD73I1C1674EV 4GB

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G Skill Intl F4-4000C14-16GTZR 16GB

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Gold Key Technology Co Ltd NMSO416F82-3200E 16GB

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Kingston 9965525-018.A00LF 4GB

Crucial Technology CB8GS2400.C8ET 8GB

Crucial Technology CB8GS2400.C8ET 8GB