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Samsung M3 78T3354BZ0-CCC 256MB
Crucial Technology CT16G4SFS832A.C8FB 16GB

Samsung M3 78T3354BZ0-CCC 256MB vs Crucial Technology CT16G4SFS832A.C8FB 16GB

总分
star star star star star
Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

总分
star star star star star
Crucial Technology CT16G4SFS832A.C8FB 16GB

Crucial Technology CT16G4SFS832A.C8FB 16GB

差异 规格 评论

差异

Samsung M3 78T3354BZ0-CCC 256MB 需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 15.9
    测试中的平均数值
Crucial Technology CT16G4SFS832A.C8FB 16GB 需要考虑的原因
Crucial Technology CT16G4SFS832A.C8FB 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    40 left arrow 46
    左右 -15% 更低的延时
  • 更快的写入速度，GB/s
    12.3 left arrow 1,519.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 3200
    左右 8 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T3354BZ0-CCC 256MB
Crucial Technology CT16G4SFS832A.C8FB 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    46 left arrow 40
  • 读取速度，GB/s
    2,909.8 left arrow 15.9
  • 写入速度，GB/s
    1,519.2 left arrow 12.3
  • 内存带宽，mbps
    3200 left arrow 25600
Other
  • 描述
    PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
  • 时序/时钟速度
    3-3-3-12 / 400 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    241 left arrow 3020

Samsung M3 78T3354BZ0-CCC 256MB RAM的比较

Samsung M4 70T3354BZ0-CCC 256MB
Kreton Corporation 51621xxxx68x35xxxx 2GB

Crucial Technology CT16G4SFS832A.C8FB 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Crucial Technology CT16G4SFS832A.C8FB 16GB
Crucial Technology CT16G4SFS832A.C8FB 16GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Crucial Technology CT16G4SFD8266.M16FJ 16GB
Crucial Technology CT16G4SFD8266.M16FJ 16GB
内存RAM
Samsung M471B5273EB0-CK0 4GB
Samsung M471B5273EB0-CK0 4GB
G Skill Intl F4-3466C16-8GTZR 8GB
G Skill Intl F4-3466C16-8GTZR 8GB
内存RAM
Patriot Memory (PDP Systems) PSD22G8002 2GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Kingston 9905702-184.A00G 8GB
Kingston 9905702-184.A00G 8GB
内存RAM
SK Hynix HYMP164U64CP6-Y5 512MB
SK Hynix HYMP164U64CP6-Y5 512MB
Samsung M393A2G40DB1-CRC 16GB
Samsung M393A2G40DB1-CRC 16GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Essencore Limited IM48GU88N26-GIIHA 8GB
Essencore Limited IM48GU88N26-GIIHA 8GB
内存RAM
Kingston 99U5584-004.A00LF 4GB
Kingston 99U5584-004.A00LF 4GB
Kingston KHX2133C14/16G 16GB
Kingston KHX2133C14/16G 16GB
内存RAM
Kingston 99U5474-028.A00LF 4GB
Kingston 99U5474-028.A00LF 4GB
Crucial Technology CT32G4DFD832A.M16FB 32GB
Crucial Technology CT32G4DFD832A.M16FB 32GB
内存RAM
Corsair CMSX16GX4M1A2400C16 16GB
Corsair CMSX16GX4M1A2400C16 16GB
Samsung M471A2K43DB1-CWE 16GB
Samsung M471A2K43DB1-CWE 16GB
内存RAM
SK Hynix DDR2 800 2G 2GB
SK Hynix DDR2 800 2G 2GB
G Skill Intl F4-2400C15-4GIS 4GB
G Skill Intl F4-2400C15-4GIS 4GB
内存RAM
Kingston 9965433-034.A00LF 4GB
Kingston 9965433-034.A00LF 4GB
Crucial Technology BLS16G4S240FSD.16FD 16GB
Crucial Technology BLS16G4S240FSD.16FD 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Apacer Technology 78.C1GM3.C7W0B 8GB
Apacer Technology 78.C1GM3.C7W0B 8GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Gloway International Co. Ltd. TYP4U3000E16082C 8GB
Gloway International Co. Ltd. TYP4U3000E16082C 8GB
内存RAM
Samsung M393B5170FH0-CK0 4GB
Samsung M393B5170FH0-CK0 4GB
Mushkin 99[2/7/4]209F 8GB
Mushkin 99[2/7/4]209F 8GB
内存RAM