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Samsung M3 78T3354BZ0-CCC 256MB
G Skill Intl F4-3600C16-8GTESC 8GB

Samsung M3 78T3354BZ0-CCC 256MB vs G Skill Intl F4-3600C16-8GTESC 8GB

总分
star star star star star
Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

总分
star star star star star
G Skill Intl F4-3600C16-8GTESC 8GB

G Skill Intl F4-3600C16-8GTESC 8GB

差异 规格 评论

差异

Samsung M3 78T3354BZ0-CCC 256MB 需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB
报告一个错误
G Skill Intl F4-3600C16-8GTESC 8GB 需要考虑的原因
G Skill Intl F4-3600C16-8GTESC 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    31 left arrow 46
    左右 -48% 更低的延时
  • 更快的读取速度，GB/s
    20.3 left arrow 2
    测试中的平均数值
  • 更快的写入速度，GB/s
    18.2 left arrow 1,519.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 3200
    左右 5.31 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T3354BZ0-CCC 256MB
G Skill Intl F4-3600C16-8GTESC 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    46 left arrow 31
  • 读取速度，GB/s
    2,909.8 left arrow 20.3
  • 写入速度，GB/s
    1,519.2 left arrow 18.2
  • 内存带宽，mbps
    3200 left arrow 17000
Other
  • 描述
    PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    3-3-3-12 / 400 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    241 left arrow 3738

Samsung M3 78T3354BZ0-CCC 256MB RAM的比较

Samsung M4 70T3354BZ0-CCC 256MB
Kreton Corporation 51621xxxx68x35xxxx 2GB

G Skill Intl F4-3600C16-8GTESC 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

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Kingston 99U5474-023.A00LF 4GB
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内存RAM
G Skill Intl F3-1600C11-4GIS 4GB
G Skill Intl F3-1600C11-4GIS 4GB
G Skill Intl F4-2400C16-8GIS 8GB
G Skill Intl F4-2400C16-8GIS 8GB
内存RAM
Kingston 9905403-515.A00LF 8GB
Kingston 9905403-515.A00LF 8GB
Golden Empire CL18-20-20 D4-3000 8GB
Golden Empire CL18-20-20 D4-3000 8GB
内存RAM
Crucial Technology BLS4G3D1609DS1S00. 4GB
Crucial Technology BLS4G3D1609DS1S00. 4GB
Corsair CMZ8GX3M2A1600C9 4GB
Corsair CMZ8GX3M2A1600C9 4GB
内存RAM
Kingston 9965525-140.A00LF 8GB
Kingston 9965525-140.A00LF 8GB
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Kingmax Semiconductor GSJF62F-DA---------- 4GB
内存RAM
Team Group Inc. Vulcan-1600 4GB
Team Group Inc. Vulcan-1600 4GB
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Chun Well Technology Holding Limited D4U0832161B 8GB
内存RAM
Crucial Technology BLS4G3D1609DS1S00. 4GB
Crucial Technology BLS4G3D1609DS1S00. 4GB
Kingston 99U5702-095.A00G 8GB
Kingston 99U5702-095.A00G 8GB
内存RAM
Kingston 9965525-018.A00LF 4GB
Kingston 9965525-018.A00LF 4GB
Kingston KHX2933C15D4/8GX 8GB
Kingston KHX2933C15D4/8GX 8GB
内存RAM
Kingston 9905458-017.A01LF 4GB
Kingston 9905458-017.A01LF 4GB
Kingston KHX4800C19D4/8GX 8GB
Kingston KHX4800C19D4/8GX 8GB
内存RAM
Crucial Technology CT102464BF160B.C16 8GB
Crucial Technology CT102464BF160B.C16 8GB
G Skill Intl F4-3600C16-8GTZKW 8GB
G Skill Intl F4-3600C16-8GTZKW 8GB
内存RAM
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Crucial Technology BLS8G4D240FSEK.8FBD 8GB
Crucial Technology BLS8G4D240FSEK.8FBD 8GB
内存RAM
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Ramaxel Technology RMSA3300MH78HBF-2666 16GB
Ramaxel Technology RMSA3300MH78HBF-2666 16GB
内存RAM
SK Hynix HMT325S6CFR8C-PB 2GB
SK Hynix HMT325S6CFR8C-PB 2GB
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Crucial Technology CT16G4DFD824A.M16FA 16GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
Kingston 9905625-065.A00G 16GB
Kingston 9905625-065.A00G 16GB
内存RAM