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Samsung M3 78T3354BZ0-CCC 256MB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR8N-UH 16GB
比较
Samsung M3 78T3354BZ0-CCC 256MB vs Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR8N-UH 16GB
总分
Samsung M3 78T3354BZ0-CCC 256MB
总分
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR8N-UH 16GB
差异
规格
评论
差异
需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB
报告一个错误
更快的读取速度,GB/s
2
10.3
测试中的平均数值
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR8N-UH 16GB
报告一个错误
低于PassMark测试中的延时,ns
35
46
左右 -31% 更低的延时
更快的写入速度,GB/s
8.0
1,519.2
测试中的平均数值
更高的内存带宽,mbps
19200
3200
左右 6 更高的带宽
规格
完整的技术规格清单
Samsung M3 78T3354BZ0-CCC 256MB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR8N-UH 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
46
35
读取速度,GB/s
2,909.8
10.3
写入速度,GB/s
1,519.2
8.0
内存带宽,mbps
3200
19200
Other
描述
PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
3-3-3-12 / 400 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
241
2327
Samsung M3 78T3354BZ0-CCC 256MB RAM的比较
Samsung M4 70T3354BZ0-CCC 256MB
Kreton Corporation 51621xxxx68x35xxxx 2GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR8N-UH 16GB RAM的比较
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
A-DATA Technology AD73I1C1674EV 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M3 78T3354BZ0-CCC 256MB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR8N
A-DATA Technology DDR3 1866 2OZ 4GB
Apacer Technology 78.CAGP7.DFW0C 8GB
SK Hynix HMT325U6CFR8C-PB 2GB
Kingston KHX3466C17D4/16GX 16GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Kllisre 99P5428-002.A00LF 8GB
Kingston KVR16N11/8-SP 8GB
Kingston XVTW4H-MIE 32GB
SK Hynix HMT151R7TFR4C-H9 4GB
Corsair CMK32GX4M2C3200C18 16GB
A-DATA Technology DOVF1B163G2G 2GB
Corsair CMU16GX4M2C3000C15 8GB
Samsung M393B2G70BH0-YK0 16GB
Samsung M471A5244CB0-CRC 4GB
Corsair CMY8GX3M2A2666C10 4GB
Tanbassh 8G 2666MHZ 8GB
AMD R5316G1609U2K 8GB
SK Hynix V-GeN D4H4GL30A8TX5 4GB
Samsung M378T5663QZ3-CF7 2GB
Lexar Co Limited LD4AU016G-H2666G 16GB
G Skill Intl F3-2133C9-4GAB 4GB
Patriot Memory (PDP Systems) 4000 C20 Series 8GB
Samsung M393B2G70BH0-CK0 16GB
Atla Electronics Co. Ltd. AD4SST8GT1WB-FQGE 8GB
Kingston 9965525-140.A00LF 8GB
Kingston 9905711-032.A00G 8GB
报告一个错误
×
Bug description
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